As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior.
@article{arxiv.physics/0202013,
title = {As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy},
author = {Shiro Tsukamoto and Markus Pristovsek and Bradford G. Orr and Akihiro Ohtake and Gavin R. Bell and Nobuyuki Koguchi},
journal= {arXiv preprint arXiv:physics/0202013},
year = {2007}
}