We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gate images differentiate reliably between the different regimes of electron transport. Our data are in good agreement with recent theories for interacting electron liquids in the ballistic and viscous regimes stimulated by measurements in graphene. However, the range of temperatures and densities where viscous effects are observable in Ga[Al]As are very distinct from the graphene material system.
@article{arxiv.1807.03177,
title = {Scanning Gate Microscopy in a Viscous Electron Fluid},
author = {Beat A Braem and Francesco M D Pellegrino and Alessandro Principi and Marc Röösli and Carolin Gold and Szymon Hennel and Jonne V Koski and Matthias Berl and Werner Dietsche and Werner Wegscheider and Marco Polini and Thomas Ihn and Klaus Ensslin},
journal= {arXiv preprint arXiv:1807.03177},
year = {2018}
}
Comments
With attached supplemental material and journal reference