相关论文: Low Resistance GaN/InGaN/GaN Tunnel Junctions
Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow…
Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron…
A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
Point contact junctions made from two pieces of MgB2 can be adjusted to exhibit either superconductor-insulator-superconductor (SIS) or superconductor-normal metal-superconductor (SNS) current-voltage characteristics. The SIS…
Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate.…
AlP and GaN are wide band-gap semiconductors (SC) uses in opto-electronic industry as light emitting diodes. Here we investigate it as future perspective candidate for insulating barrier in magnetic tunnel junctions. We employ density…
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly shorten the tunnel distance and create…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…
The resistance is computed of an ${\rm NI}_{1}{\rm NI}_{2}{\rm S}$ junction, where N = normal metal, S = superconductor, and ${\rm I}_{i}$ = insulator or tunnel barrier (transmission probability per mode $\Gamma_{i}$). The ballistic case is…
Measurements of conductance spectra in a superconductor - topological insulator - normal metal thin film junctions of NbN-$\rm Bi_2Se_3$-Au are reported. Junctions with ex-situ and in-situ prepared $\rm NbN-Bi_2Se_3$ interfaces were…
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact.…
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…
Ohmic contacts to high (>70\%) Al content n-type Al$_x$Ga$_{1-x}$N ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a lift-off process and high temperature ($>700^\circ$C)…
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility…
We have integrated on oxidized silicon wafers superconductive films and Josephson junctions along with sol-gel optical channel waveguides. The fabrication process is carried out in two steps that result to be solid and non-invasive. It is…
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities.…
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…