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相关论文: Dielectric breakdown of Mott insulators -- doublon…

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Using nonequilibrium dynamical mean-field theory, we compute the time evolution of the current in a Mott insulator after a strong electric field is turned on. We observe the formation of a quasistationary state in which the current is…

强关联电子 · 物理学 2013-05-29 Martin Eckstein , Takashi Oka , Philipp Werner

Nonlinear response of a Mott insulator to external electric field, corresponding to dielectric breakdown phenomenon, is studied within of a one-dimensional half-filled Hubbard model. It is shown that in the limit of nearly spin polarized…

强关联电子 · 物理学 2012-05-11 Zala Lenarčič , Peter Prelovšek

We study the nonequilibrium steady state of a Mott insulator coupled to a thermostat and driven by a constant electric field, starting from weak fields, until the dielectric breakdown, and beyond. We find that the conventional Zener picture…

强关联电子 · 物理学 2015-03-20 Camille Aron

We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard…

强关联电子 · 物理学 2013-05-29 Martin Eckstein , Philipp Werner

Doublon-hole pair production which takes place during dielectric breakdown in a Mott insulator subject to a strong laser or a static electric field is studied in the one-dimensional Hubbard model. Two nonlinear effects cause the excitation,…

强关联电子 · 物理学 2015-03-19 Takashi Oka

The breakdown of the Mott insulator is studied when the dissipative tunneling into the environment is introduced to the system. By exactly solving the one-dimensional asymmetric Hubbard model, we show how such a breakdown of the Mott…

统计力学 · 物理学 2009-10-31 T. Fukui , N. Kawakami

An analytical solution of the Mott transition is obtained for the Hubbard model on the Bethe lattice in the large coordination number ($z$) limit. The excitonic binding of doublons (doubly occupied sites) and holons (empty sites) is shown…

强关联电子 · 物理学 2016-12-15 Sen Zhou , Long Liang , Ziqiang Wang

Using Floquet dynamical mean-field theory, we study the high-harmonic generation in the time-periodic steady states of wide-gap Mott insulators under AC driving. In the strong-field regime, the harmonic intensity exhibits multiple plateaus,…

强关联电子 · 物理学 2018-08-06 Yuta Murakami , Martin Eckstein , Philipp Werner

Charge creation via quantum tunneling, i.e. dielectric breakdown, is one of the most fundamental and significant phenomena arising from strong light(field)-matter coupling. In this work, we conduct a systematic numerical analysis of quantum…

强关联电子 · 物理学 2026-05-08 Thomas Hansen , Lars Bojer Madsen , Yuta Murakami

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

We investigate the dielectric breakdown of mesoscopic Mott insulators, a phenomenon where a strong electric field destabilizes the insulating state, resulting in a transition to a metallic phase. Using the Landau-Zener formalism, which…

强关联电子 · 物理学 2025-07-09 Joan Triadú-Galí , Artur Garcia-Saez , Bruno Juliá-Díaz , Axel Pérez-Obiol

High-harmonic generation (HHG) in strongly correlated Mott insulators is investigated using exact diagonalization and time-dependent density-matrix propagation of a laser-driven one-dimensional Hubbard chain. By projecting onto equilibrium…

光学 · 物理学 2026-05-05 Tao-Yuan Du , Hui-Ru Li , Bo Li , Ruifeng Lu

Charge excitations in Mott insulators (MIs) are distinct from their band-insulator counterparts and they can provide a mechanism for energy harvesting in solar cells based on strongly correlated electronic materials. In this paper, we study…

The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number $z$ that incorporates the binding between doubly occupied…

强关联电子 · 物理学 2020-01-15 Sen Zhou , Long Liang , Ziqiang Wang

In the ionic Hubbard model, the onsite repulsion $U$, which drives a Mott insulator and the ionic potential $V$, which drives a band insulator, compete with each other to open up a window of charge fluctuations when $U \sim V$. We study…

强关联电子 · 物理学 2017-01-04 Abhisek Samanta , Rajdeep Sensarma

We study the effect of strong DC and pulsed electric fields on a Mott insulating system with coupling to optical phonons. A DC field of the order of the gap induces a metallic state characterized by polaronic features in the gap region and…

强关联电子 · 物理学 2015-02-16 Philipp Werner , Martin Eckstein

We study the influence of the pulse energy and fluence on the thermalization of photo-doped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to…

强关联电子 · 物理学 2014-12-09 Philipp Werner , Karsten Held , Martin Eckstein

We develop a method for extracting the steady nonequilibrium current from studies of driven isolated systems, applying it to the model of one-dimensional Mott insulator at high temperatures. While in the nonintegrable model the…

强关联电子 · 物理学 2015-05-28 Marcin Mierzejewski , Janez Bonca , Peter Prelovsek

We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model…

强关联电子 · 物理学 2018-06-07 Julian Rincon , Elbio Dagotto , Adrian E. Feiguin

Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order on the Mott-Hubbard excitons. In particular, we focus on spin-mediated doublon-holon pairing in…

强关联电子 · 物理学 2024-04-23 T. -S. Huang , C. L. Baldwin , M. Hafezi , V. Galitski
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