相关论文: Spin transition in the fractional quantum Hall reg…
The average electron spin-polarization $\cal P$ of two-dimensional electron gas confined in $\rm GaAs/GaAlAs$ multiple quantum-wells was measured by nuclear magnetic resonance (NMR) near the fractional quantum Hall state with filling factor…
We consider the effect of contact interaction in a prototypical quantum spin Hall system of pseudo-spin-1/2 particles. A strong effective magnetic field with opposite directions for the two spin states restricts two-dimensional particle…
We have investigated the spin dynamics of a high-mobility two-dimensional electron system (2DES) in a GaAs--Al$_{0.3}$Ga$_{0.7}$As single quantum well by time-resolved Faraday rotation (TRFR) in dependence on the initial degree of spin…
Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems,…
We describe formally the precession of spin vector about the k-space effective magnetic field in condensed matter system with spin orbital effects as constituting a local transformation of the electron wavefunction which necessarily invokes…
The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the…
We have performed pressure dependent X-ray diffraction and resonant X-ray emission spectroscopy experiments on USb$_2$ to further characterize the AFM-FM transition occurring near 8 GPa. We have found the magnetic transition coincides with…
We discuss the orbital effect of a tilted magnetic field on the quantum Hall effect in parabolic quantum wells. Many-body states realized at the fractional 1/3 and 1/2 filling of the second electronic subband are studied using finite-size…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
We measured the magnetoresistance of bilayer quantum Hall (QH) effects at the fractional filling factor $\nu =2/3$ by changing the total electron density and the density difference between two layers. Three different QH states were…
We analyze the effects of spin-orbit coupling on fluctuations of the conductance of a quantum dot fabricated in a GaAs heterostructure. We argue that spin-orbit effects may become important in the presence of a large parallel magnetic field…
A five-level {\Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic…
Within the Sommerfeld atomic model the quantization of magnetic flux through the electronic orbits is investigated together with its dependency on additional sources of magnetic fields. These sources alter the magnetic flux through the…
We propose an experimentally-feasible system based on spin transitions in the fractional quantum Hall effect regime where parafermions, high-order non-abelian excitations, can be potentially realized. We provide a proof-of-concept…
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a…
It is known experimentally that at not very large filling factors $\nu$ the quantum Hall conductivity peaks corresponding to the same Landau level number $N$ and two different spin orientations are well separated. These peaks occur at…
Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows the features of the $\Gamma$(2) modular symmetry, which includes distorted flowlines and…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
We report a new electron interaction effect in GaAs/AlGaAs quantum wires. Using DC-bias spectroscopy, we show that large and abrupt changes occur to the energies of spin-down (lower energy) states as they populate. The effect is not…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…