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Identification and control of topological phases in topological thin films offer great opportunity for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission…

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band…

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to…

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…

介观与纳米尺度物理 · 物理学 2015-11-12 Weiguang Ye , A. B. Pakhomov , Shuigang Xu , Huanhuan Lu , Zefei Wu , Yu Han , Tianyi Han , Yingying Wu , Gen Long , Jiangxiazi Lin , Gu Xu , Yuan Cai , Lu-Tao Weng , Ning Wang

Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the…

强关联电子 · 物理学 2018-03-29 Wenhan Zhang , M. X. Chen , Jixia Dai , Xueyun Wang , Zhicheng Zhong , Sang-Wook Cheong , Weida Wu

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…

介观与纳米尺度物理 · 物理学 2012-12-21 Jiwon Chang , Leonard F. Register , Sanjay K. Banerjee

Based on fully relativistic first-principles calculations, we studied the topological properties of layered XIn$_2$P$_2$ (X = Ca, Sr). Band inversion can be induced by strain without SOC, forming one nodal ring in the k$_z$ = 0 plane, which…

材料科学 · 物理学 2025-11-04 Zhenwei Wang , Guangtao Wang , Xianbiao Shi , Dongyang Wang , Xin Tian

The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit…

介观与纳米尺度物理 · 物理学 2011-10-24 Su-Yang Xu , Y. Xia , L. A. Wray , D. Qian , Shuang Jia , J. H. Dil , F. Meier , J. Osterwalder , B. Slomski , H. Lin , R. J. Cava , M. Z. Hasan

By first-principles calculations, we find that Ba2X(X=Si, Ge) hosts a topological semimetal phase with one nodal ring in the kx=0 plane, which is protected by the glide mirror symmetry when spin-orbit coupling (SOC) is ignored. The…

介观与纳米尺度物理 · 物理学 2016-10-18 Ziming Zhu , Mingda Li , Ju Li

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

材料科学 · 物理学 2015-06-23 J. Barzola-Quiquia , T. Lehmann , M. Stiller , D. Spemann , P. Esquinazi , P. Häussler

We discuss possible topological phase transitions in Ge-based thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ as a function of layer thickness and Bi concentration $x$ using the first principles density functional theory framework. The bulk…

介观与纳米尺度物理 · 物理学 2014-02-12 Bahadur Singh , Hsin Lin , R. Prasad , A. Bansil

We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level.…

介观与纳米尺度物理 · 物理学 2017-01-10 William S. Whitney , Victor W. Brar , Yunbo Ou , Yinming Shao , Artur R. Davoyan , D. N. Basov , Ke He , Qi-Kun Xue , Harry A. Atwater

We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect…

介观与纳米尺度物理 · 物理学 2014-05-07 Tong Zhang , Jeonghoon Ha , Niv Levy , Young Kuk , Joseph Stroscio

Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These…

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…

介观与纳米尺度物理 · 物理学 2013-04-15 Tong Zhang , Niv Levy , Jeonghoon Ha , Young Kuk , Joseph A. Stroscio

Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…

介观与纳米尺度物理 · 物理学 2013-01-01 Pouyan Ghaemi , Roger Mong , Joel E. Moore

Topological phases, especially topological crystalline insulators (TCIs), have been intensively explored observed experimentally in three-dimensional (3D) materials. However, the two-dimensional (2D) films are explored much less than 3D…

Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $\alpha$-In$_2$Se$_3$…

材料科学 · 物理学 2024-02-29 Zhiqiang Tian , Ziming Zhu , Jiang Zeng , Chao-Fei Liu , Yurong Yang , Anlian Pan , Mingxing Chen

We performed broadband optical transmission measurements of Bi2Se3 and In-doped Bi(1-x)In(x)2Se3 thin films, where in the latter the spin-orbit coupling (SOC) strength can be tuned by introducing In. Drude and interband transitions exhibit…

材料科学 · 物理学 2019-11-11 Jiwon Jeon , Kwangnam Yu , Jiho Kim , Jisoo Moon , Seongshik Oh , E. J. Choi
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