相关论文: All-electrical measurements of direct spin Hall ef…

We show that two types of spin-orbit coupling in the 2 dimensional hole gas (2DHG), with and without inversion symmetry breaking, contribute to the intrinsic spin Hall effect\cite{murakami2003,sinova2003}. Furthermore, the vertex correction…

The phenomenon of Spin Hall Effect (SHE) generates a pure spin current transverse to an applied current in materials with strong spin-orbit coupling, although not detectable through conventional electrical measurement. An intuitive Hall…

We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection.…

The direct-current (dc) $\sigma_{xx}^{dc}$ and alternating-current (ac) $\sigma_{xx}^{ac}=\sigma_1-i\sigma_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that…

Anomalous Hall effect arises in systems with both spin-orbit coupling and magnetization. Generally, there are three mechanisms contributing to anomalous Hall conductivity: intrinsic, side jump, and skew scattering. The standard diagrammatic…

In this paper, we perform a systematic {\it ab initio} study of two principal spin-related phenomena, namely, anomalous Hall effect and current spin polarization, in Co$_2$Fe-based Heusler compounds Co$_2$FeX (X = Al, Ga, In, Si, Ge, Sn)…

The electrical and thermo-electrical transport effects of the TaAs$_2$ semimetal were measured in a magnetic field applied along [-2 0 1] direction. The resulting field dependences of the resistivity as well as the Hall, Seebeck and Nernst…

We interpret the recent observation of a zero-bias anomaly in spin-1 quantum dots in terms of an underscreened Kondo effect. Although a spin-1 quantum dots are expected to undergo a two-stage quenching effect, in practice the log normal…

We show that the bulk Dresselhauss ($k^3$) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs…

Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…

A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe$_3$O$_4$ (insulating ferrimagnet) and a spin detector layer. It…

In Fe-based kagome magnets, Fe3Sn has been predicted to have the largest intrinsic anomalous Hall conductivity (AHC) and the highest Curie temperature TC = 743 K. However, the current experimental results show that the total AHC is much…

We derive the anomalous Hall contributions arising from dipolar interactions to diffusive spin transport in magnetic insulators. Magnons, the carriers of angular momentum in these systems, are shown to have a non-zero Berry curvature,…

We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We find that the existence of the ferromagnetic transition is dependent upon the choice of well…

Measurements of the Hall effect, thermoelectric power, magnetic susceptibility and upper and lower critical fields were performed on single crystals of SrFe(2-x)Ni(x)As2, an FeAs-based superconducting system that exhibits a reduced…

The spin Hall effect is investigated in a high mobility two dimensional electron system with the spin-orbital coupling of both the Rashba and the Dresselhaus types. A spin current perpendicular to the electric field is generated by either…

Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…

We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…

The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…

The spin Hall conductivity (SHC) and anomalous Hall conductivity (AHC) in more than 120 full Heusler compounds are calculated using density functional theory in a high-throughtput way. The electronic structures are mapped to the Wannier…