相关论文: All-electrical measurements of direct spin Hall ef…
We report on the observation of the spin Seebeck effect in antiferromagnetic MnF$_2$. A device scale on-chip heater is deposited on a bilayer of Pt (4 nm)/MnF$_2$ (110) (30 nm) grown by molecular beam epitaxy on a MgF$_2$ (110) substrate.…
We study the linear response spin Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of the Rashba spin orbit interaction in the diffusive transport regime. When defect scattering is modeled by isotropic short-range…
We evaluate the spin polarization (Edelstein or inverse spin galvanic effect) and the spin Hall current induced by an applied electric field by including the weak localization corrections for a two-dimensional electron gas. We show that the…
A new measurement technique for the spin Seebeck effect is presented, wherein the normal metal layer used for its detection is exploited simultaneously as a resistive heater and thermometer. We show how the various contributions to the…
The question is investigated whether the anomalous Hall effect (AHE) in Fe films is due to skew scattering or side jump. For this purpose sandwiches of FeIn are investigated in which the conduction electrons carry their drift velocity…
It was proposed recently by Murakami et al. [Science \textbf{301}, 1348(2003)] that in a large class of $p$-doped semiconductors, an applied electric field can drive a quantum dissipationless spin current in the direction perpendicular to…
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…
The spin Hall effect in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron coated tungsten tips. In the case of tungsten tips, it has been…
Using the Kubo formalism we derived expressions and implemented the method for calculating the anomalous Hall conductivity (AHC) in ferromagnets with short-range Gaussian disorder directly from first-principles electronic structure of the…
We present a rigorous microscopic theory of the extrinsic spin Hall effect in disordered graphene based on a nonperturbative quantum diagrammatic treatment incorporating skew scattering and anomalous---impurity…
We study the dependence of the intrinsic spin Hall effect on the crystal symmetry and geometry of experiment. The spin current is obtained and the Hall voltage caused by the polarization of the electron spins is computed. The unique…
The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel…
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins…
We show that pure spin Hall current, flowing out of a four-terminal phase-coherent two-dimensional electron gas (2DEG) within inversion asymmetric semiconductor heterostructure, contains contributions from both the extrinsic mechanisms…
Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The…
Electronic properties like current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom present in quantum particles. The spin Hall effects (SHEs), first proposed 40 years ago, are an unusual…
The electrical and Hall conductivities in a uniform magnetic field are evaluated for an interacting pion gas using the kinetic theory approach within the ambit of relaxation time approximation (RTA). The in-medium cross sections vis-a-vis…
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron…
Evidence of the Ettingshausen effect in the breakdown regime of the integer quantum Hall effect has been observed in a GaAs/AlGaAs two-dimensional electron system. Resistance of micro Hall bars attached to both edges of a current channel…
The spin Hall effect does not generally result in a charge Hall voltage. We predict that in systems with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect is instead accompanied by a…