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We study two models for spinless fermions featuring topologically non-trivial bands characterized by Chern numbers $C=\pm1$ at fractional filling. Using exact diagonalization, we show that, even for infinitely strong nearest-neighbor…

强关联电子 · 物理学 2014-04-02 Stefanos Kourtis , Titus Neupert , Claudio Chamon , Christopher Mudry

We construct a two-band lattice model whose bands can carry the Chern numbers C=0,pm1,pm2. By means of numerical exact diagonalization, we show that the most favorable situation that selects fractional Chern insulators (FCIs) is not…

强关联电子 · 物理学 2012-11-26 Adolfo G. Grushin , Titus Neupert , Claudio Chamon , Christopher Mudry

A flat band with Chern number $C=0$, and well isolated from the rest of Hilbert space by a gap much larger than interaction strength, is a context that has not been regarded as relevant for fractional quantum Hall physics. In this work, we…

介观与纳米尺度物理 · 物理学 2025-12-24 Zuzhang Lin , Hongyu Lu , Wenqi Yang , Dawei Zhai , Wang Yao

Fractional Chern insulators (FCIs) are lattice generalizations of the conventional fractional quantum Hall effect (FQHE) in two-dimensional (2D) electron gases. They typically arise in a 2D lattice without time-reversal symmetry when a…

介观与纳米尺度物理 · 物理学 2023-03-03 Zhao Liu , Emil J. Bergholtz

As lattice analogs of fractional quantum Hall systems, fractional Chern insulators (FCIs) exhibit enigmatic physical properties resulting from the intricate interplay between single-body and many-body physics. In particular, the design of…

强关联电子 · 物理学 2017-10-31 Ching Hua Lee , Martin Claassen , Ronny Thomale

The recent theoretical discovery of fractional Chern insulators (FCIs) has provided an important new way to realize topologically ordered states in lattice models. In earlier works, on-site and nearest neighbor Hubbard-like interactions…

强关联电子 · 物理学 2013-11-05 Zhao Liu , Emil J. Bergholtz , Eliot Kapit

The search for candidate materials for fractional Chern insulators (FCIs) has mainly focused on the topological and geometrical structures of single-particle Chern bands. However, there are inherent limitations in approaches that neglect…

强关联电子 · 物理学 2025-12-29 Nobuyuki Okuma , Tomonari Mizoguchi

The possibility of realizing lattice analogs of fractional quantum Hall (FQH) states, so-called fractional Chern insulators (FCIs), in nearly flat topological (Chern) bands has attracted a lot of recent interest. Here, we make the…

强关联电子 · 物理学 2013-01-16 Zhao Liu , Emil J. Bergholtz

Fractional Chern insulators (FCIs) are lattice analogues of fractional quantum Hall states that may provide a new avenue toward manipulating non-abelian excitations. Early theoretical studies have predicted their existence in systems with…

Topological insulators and their intriguing edge states can be understood in a single-particle picture and can as such be exhaustively classified. Interactions significantly complicate this picture and can lead to entirely new insulating…

强关联电子 · 物理学 2013-09-10 Emil J. Bergholtz , Zhao Liu

We report the first numerical observation of composite fermion (CF) states in fractional Chern insulators (FCI) using exact diagonalization. The ruby lattice Chern insulator model for both fermions and bosons exhibits a clear signature of…

强关联电子 · 物理学 2015-03-20 Tianhan Liu , C. Repellin , B. Andrei Bernevig , N. Regnault

Recent theoretical works have demonstrated various robust Abelian and non-Abelian fractional topological phases in lattice models with topological flat bands carrying Chern number C=1. Here we study hard-core bosons and interacting fermions…

强关联电子 · 物理学 2012-11-07 Yi-Fei Wang , Hong Yao , Chang-De Gong , D. N. Sheng

Lattice generalizations of fractional quantum Hall (FQH) systems, called fractional Chern insulators (FCIs), have been extensively investigated in strongly correlated systems. Despite many efforts, previous studies have not revealed all of…

强关联电子 · 物理学 2022-09-28 Nobuyuki Okuma , Tomonari Mizoguchi

Fractional Chern insulators arise in topologically nontrivial flat bands, characterized by an integer Chern number C that corresponds to the number of dissipationless edge states in the non-interacting regime. Higher Chern numbers can…

强关联电子 · 物理学 2026-01-29 Ying-Xing Ding , Wen-Tong Li , Li-Min Zhang , Yu-Biao Wu , Duanlu Zhou , Lin Zhuang , Wu-Ming Liu

We review various features of interacting Abelian topological phases of matter in two spatial dimensions, placing particular emphasis on fractional Chern insulators (FCIs) and fractional topological insulators (FTIs). We highlight aspects…

强关联电子 · 物理学 2015-11-17 Titus Neupert , Claudio Chamon , Thomas Iadecola , Luiz H. Santos , Christopher Mudry

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of…

Fractional Chern insulators (FCIs) -- the lattice analog of fractional quantum Hall states -- form as fractionalized quasiparticles emerge in a partially-filled Chern band. This fractionalization is driven by the interplay of electronic…

A recent experiment has reported the first observation of a zero-field fractional Chern insulator (FCI) phase in twisted bilayer MoTe$_2$ moir\'e superlattices [Nature 622, 63-68 (2023)]. The experimental observation is at an unexpected…

强关联电子 · 物理学 2024-04-09 Chong Wang , Xiao-Wei Zhang , Xiaoyu Liu , Yuchi He , Xiaodong Xu , Ying Ran , Ting Cao , Di Xiao

The experimental discoveries of fractional quantum anomalous Hall effects under zero magnetic fields in both transition metal dichalcogenide and pentalayer graphene moir\'e superlattices have aroused significant research interest. In this…

强关联电子 · 物理学 2024-09-24 Zhongqing Guo , Xin Lu , Bo Xie , Jianpeng Liu

The fractional Chern insulators (FCIs) observed in pentalayer rhombohedral graphene/hexagonal boron nitride superlattices have a unique origin contrary to theoretical expectations: their non-interacting band structure is gapless, unlike…

强关联电子 · 物理学 2025-09-26 Jiabin Yu , Jonah Herzog-Arbeitman , Yves H. Kwan , Nicolas Regnault , B. Andrei Bernevig
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