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相关论文: Silicene Structures on Silver Surfaces

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By using first-principles calculations, we systematically investigated several observed phases of silicene on Ag(111) substrates and their electronic structures. We find that the original Dirac cone of silicene is about 1.5-1.7 eV deeply…

介观与纳米尺度物理 · 物理学 2015-06-17 Yakun Yuan , Ruge Quhe , Jiaxin Zheng , Yangyang Wang , Zeyuan Ni , Junjie Shi , Jing Lu

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi…

As graphene became one of the most important materials today, there is a renewed interest on others similar structures. One example is silicene, the silicon analogue of graphene. It share some the remarkable graphene properties, such as the…

介观与纳米尺度物理 · 物理学 2014-10-06 T. Botari , E. Perim , P. A. S. Autreto , A. C. T. van Duin , R. Paupitz , D. S. Galvao

A new silicene-like family of reconstructed surfaces on Si111 are discussed which appears to be a polymorph to the well know family of surface reconstructions best epitomized by the 7x7 surface. Several experimental features are discussed…

材料科学 · 物理学 2020-02-27 J. E. Demuth

We study the structural and electronic properties of silicene on solid Ar(111) substrate using ab-initio calculations. We demonstrate that due to weak interaction quasi-freestanding silicene is realized in this system. The small binding…

介观与纳米尺度物理 · 物理学 2014-06-25 S. Sattar , R. Hoffmann , U. Schwingenschlögl

Honeycomb bismuthene structures on Ag(111) were investigated using low-energy electron diffraction (LEED) and density functional theory. LEED I(V) analysis revealed that 0.5 monolayer (ML) of Bi forms an ultraflat honeycomb lattice with…

材料科学 · 物理学 2026-02-11 Ziyong Zhang , Xiaobin Chen , Takeshi Nakagawa

Based on first-principles calculation we predict two new thermodynamically stable layered-phases of silicon, named as silicites, which exhibit strong directionality in the electronic and structural properties. As compared to silicon…

介观与纳米尺度物理 · 物理学 2014-10-01 Seymur Cahangirov , V. Ongun Ozcelik , Angel Rubio , Salim Ciraci

In this work, we report our results on the geometric and electronic properties of hybrid graphite-like structure made up of silicene and boron nitride (BN) layers. We predict from our calculations that this hybrid bulk system, with…

材料科学 · 物理学 2015-02-26 C. Kamal , Aparna Chakrabarti , Arup Banerjee

A silicene-like polymorph of the Si111 7x7 surface is proposed that resolves numerous experimental paradoxes and inconsistencies arising over the past 34 years. An analysis of the three established surface state charge densities from atom…

材料科学 · 物理学 2019-05-30 J. E. Demuth

By combining experimental techniques with ab-initio density functional theory calculations, we describe the Si/Ag(111) two-dimensional system in terms of a sp2-sp3 crystalline form of silicon characterized by a vertically distorted…

介观与纳米尺度物理 · 物理学 2013-08-20 E. Cinquanta , E. Scalise , D. Chiappe , C. Grazianetti , B. van den Broek , M. Houssa , M. Fanciulli , A. Molle

The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here.…

材料科学 · 物理学 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

We performed a scanning tunneling microscopy and spectroscopy (STM/STS) study on the electronic structures of of root(3)Xroot(3)-silicene on Ag(111). We find that the coupling strength of root(3)Xroot(3)-silicene with Ag(111) substrate is…

材料科学 · 物理学 2015-03-17 Baojie Feng , Wenbin Li , Jinglan Qiu , Peng Cheng , Lan Chen , Kehui Wu

Inspired by the unique properties of graphene, the focus in the literature is now on investigations of various two-dimensional (2D) materials with the aim to explore their properties for future applications. The group IV analogues of…

材料科学 · 物理学 2020-03-24 J. Shah , H. M. Sohail , R. I. G. Uhrberg , W. Wang

We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a…

材料科学 · 物理学 2020-06-02 Naili Yue , Joshua Myers , Liqin Su , Wentao Wang , Fude Liu , Raphael Tsu , Yan Zhuang , Yong Zhang

We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we…

材料科学 · 物理学 2015-02-26 C. Kamal , Aparna Chakrabarti , Arup Banerjee , S. K. Deb

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first…

材料科学 · 物理学 2009-11-13 J. Hass , J. E. Millan-Otoya , P. N. First , E. H. Conrad

Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional…

材料科学 · 物理学 2020-03-24 J. Shah , W. Wang , H. M. Sohail , R. I. G. Uhrberg

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different…

介观与纳米尺度物理 · 物理学 2015-06-05 Guowei He , N. Srivastava , R. M. Feenstra

In this paper, using the same geometrical approach than for the (2R3x2R3) R30{\deg} structure (H. Jamgotchian et al., 2015, Journal of Physics. Condensed Matter 27 395002), for the (R13xR13)R13.9{\deg} type II structure, we propose an…

材料科学 · 物理学 2016-05-25 H. Jamgotchian , B. Ealet , H. Maradj , J. -Y. Hoarau , J. -P. Biberian , B. Aufray

Although (103) is a stable nominal orientation for both silicon and germanium, experimental observations revealed that in the case of silicon this surface remains disordered on an atomic scale even after careful annealing. We report here a…

材料科学 · 物理学 2009-11-13 C. V. Ciobanu , F. C. Chuang , D. E. Lytle