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相关论文: Fractional Chern Insulators in Topological Flat ba…

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Topological insulators and their intriguing edge states can be understood in a single-particle picture and can as such be exhaustively classified. Interactions significantly complicate this picture and can lead to entirely new insulating…

强关联电子 · 物理学 2013-09-10 Emil J. Bergholtz , Zhao Liu

A large number of recent works point to the emergence of intriguing analogs of fractional quantum Hall states in lattice models due to effective interactions in nearly flat bands with Chern number C=1. Here, we provide an intuitive and…

强关联电子 · 物理学 2013-01-01 Maximilian Trescher , Emil J. Bergholtz

Fractional Chern insulators arise in topologically nontrivial flat bands, characterized by an integer Chern number C that corresponds to the number of dissipationless edge states in the non-interacting regime. Higher Chern numbers can…

强关联电子 · 物理学 2026-01-29 Ying-Xing Ding , Wen-Tong Li , Li-Min Zhang , Yu-Biao Wu , Duanlu Zhou , Lin Zhuang , Wu-Ming Liu

The integer quantum Hall state occurs when the Landau levels are fully occupied by the fermions, while the fractional quantum Hall state usually emerges when the Landau level is partially filled by the strongly correlated fermions or…

强关联电子 · 物理学 2021-09-22 Wei-Wei Luo , Ai-Lei He , Yi-Fei Wang , Yuan Zhou , Chang-De Gong

We report the theoretical discovery of a systematic scheme to produce topological flat bands (TFBs) with arbitrary Chern numbers. We find that generically a multi-orbital high Chern number TFB model can be constructed by considering…

强关联电子 · 物理学 2013-01-01 Shuo Yang , Zheng-Cheng Gu , Kai Sun , S. Das Sarma

Recent theoretical works have demonstrated various robust Abelian and non-Abelian fractional topological phases in lattice models with topological flat bands carrying Chern number C=1. Here we study hard-core bosons and interacting fermions…

强关联电子 · 物理学 2012-11-07 Yi-Fei Wang , Hong Yao , Chang-De Gong , D. N. Sheng

Most fractional quantum Hall states have been traditionally identified within a single energy band, such as the lowest Landau level or topological flat band. As more particles are introduced, they inevitably populate higher energy bands.…

强关联电子 · 物理学 2026-01-21 Licheng Wang , Dong-Hao Guan , Ai-Lei He , Shun-Li Yu , Yuan Zhou

We present a class of states with both topological and conventional Landau order that arise out of strongly interacting spinless fermions in fractionally filled and topologically non-trivial bands with Chern number $C=\pm 1$. These quantum…

强关联电子 · 物理学 2014-12-11 Stefanos Kourtis , Maria Daghofer

The realization of fractional Chern insulators opens up the possibility of exploring fractionally charged excitations and anyonic statistics in the absence of a magnetic field. One of the central questions is whether lattice-based systems…

介观与纳米尺度物理 · 物理学 2025-12-29 Zexu Li , Wenxuan Wang , Fajie Wang , Zaizhe Zhang , Qiu Yang , Kenji Watanabe , Takashi Taniguchi , X. C. Xie , Jie Wang , Kaihui Liu , Zhida Song , Xiaobo Lu

We devise local lattice models whose ground states are model fractional Chern insulators---Abelian and non-Abelian topologically ordered states characterized by exact ground state degeneracies at any finite size and infinite entanglement…

强关联电子 · 物理学 2016-05-31 Jörg Behrmann , Zhao Liu , Emil J. Bergholtz

We show that, quite generically, a [111] slab of spin-orbit coupled pyrochlore lattice exhibits surface states whose constant energy curves take the shape of Fermi arcs, localized to different surfaces depending on their quasimomentum.…

强关联电子 · 物理学 2015-01-09 E. J. Bergholtz , Zhao Liu , M. Trescher , R. Moessner , M. Udagawa

We study two models for spinless fermions featuring topologically non-trivial bands characterized by Chern numbers $C=\pm1$ at fractional filling. Using exact diagonalization, we show that, even for infinitely strong nearest-neighbor…

强关联电子 · 物理学 2014-04-02 Stefanos Kourtis , Titus Neupert , Claudio Chamon , Christopher Mudry

An interesting route to the realization of topological Chern bands in ultracold atomic gases is through the use of optical flux lattices. These models differ from the tight-binding real-space lattice models of Chern insulators that are…

量子气体 · 物理学 2015-04-24 A. Sterdyniak , B. Andrei Bernevig , Nigel R. Cooper , N. Regnault

We report the observation of a new series of Abelian and non-Abelian topological states in fractional Chern insulators (FCI). The states appear at bosonic filling nu= k/(C+1) (k, C integers) in several lattice models, in fractionally filled…

强关联电子 · 物理学 2015-03-20 A. Sterdyniak , C. Repellin , B. Andrei Bernevig , N. Regnault

We construct a two-band lattice model whose bands can carry the Chern numbers C=0,pm1,pm2. By means of numerical exact diagonalization, we show that the most favorable situation that selects fractional Chern insulators (FCIs) is not…

强关联电子 · 物理学 2012-11-26 Adolfo G. Grushin , Titus Neupert , Claudio Chamon , Christopher Mudry

The Hofstadter model is a popular choice for theorists investigating the fractional quantum Hall effect on lattices, due to its simplicity, infinite selection of topological flat bands, and increasing applicability to real materials. In…

强关联电子 · 物理学 2021-09-09 Bartholomew Andrews , Titus Neupert , Gunnar Möller

We construct generalized Hofstadter models that possess "color-entangled" flat bands and study interacting many-body states in such bands. For a system with periodic boundary conditions and appropriate interactions, there exist gapped…

强关联电子 · 物理学 2015-01-29 Ying-Hai Wu , J. K. Jain , Kai Sun

Chern insulators are band insulators exhibiting a nonzero Hall conductance but preserving the lattice translational symmetry. We conclusively show that a partially filled Chern insulator at 1/3 filling exhibits a fractional quantum Hall…

强关联电子 · 物理学 2015-03-19 N. Regnault , B. Andrei Bernevig

It has been recently realized that strong interactions in topological Bloch bands give rise to the appearance of novel states of matter. Here we study connections between these systems -- fractional Chern insulators and the fractional…

强关联电子 · 物理学 2013-08-28 Zhao Liu , D. L. Kovrizhin , Emil J. Bergholtz

We present a pedagogical review of the physics of fractional Chern insulators with a particular focus on the connection to the fractional quantum Hall effect. While the latter conventionally arises in semiconductor heterostructures at low…

强关联电子 · 物理学 2015-10-05 S. A. Parameswaran , R. Roy , S. L. Sondhi
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