相关论文: Stabilization of tetragonal/cubic phase in Fe dope…

In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L)…

In the present study we report on properties of ZnCoO films grown at relatively low temperature by the Atomic Layer Deposition, using two reactive organic zinc precursors (dimethylzinc and diethylzinc). The use of these precursors allowed…

Chemical looping water splitting systems operate at relatively high temperatures (450-800 degree C) to produce, purify, or store hydrogen by the cyclic reduction and oxidation (redox) of a solid oxygen carrier. Therefore, to improve…

Thin films grown by pulsed-laser deposition from targets of Sn0.95Fe0.05O2 are transparent ferromagnets with Curie temperature and spontaneous magnetization of 610 K and 2.2 Am2kg-1, respectively. The 57Fe Mossbauer spectra show the iron is…

In this study, we have delineated the preparation and influence of Fe doping on microstructural and optical properties of the pristine and Fe incorporated TiO$_2$ thin film with different Fe concentrations (0, 2, 4, 6, and 8 at.% ). The…

Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation…

BiFeO$_3$ (BFO) shows both ferroelectricity and magnetic ordering at room temperature but its ferromagnetic component, which is due to spin canting, is negligible. Substitution of transition-metal atoms such as Co for Fe is known to enhance…

Crystal growth experiments (micro-pulling down or Czochralski methods, respectively) and DTA/TG measurements with Fe2+ containing olivines (fayalite--forsterite solid solution) and with FeO (wustite) are performed. For both substances the…

The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial…

Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a…

The realization of semiconductors that are ferromagnetic above room temperature will potentially lead to a new generation of spintronic devices with revolutionary electrical and optical properties. Transition temperatures in doped ZnO are…

In recent years there has been an intense search for room temperature ferromagnetism in doped dilute semiconductors, which have many potentially applications in spintronics and optoelectronics. We report here the unexpected observation of…

Thin films of HfO2 doped with 4% La were fabricated on LSMO/STO (100) substrates using pulsed laser deposition. The stability of the ferroelectric orthorhombic phase in the hafnia films was investigated with respect to varying oxygen…

Recently d0 or intrinsic ferromagnetism was believed to provide an alternative pathway to transition metal induced ferromagnetism in oxide. In pursuit of augmenting the area of d0 ferromagnetism; we have undertaken to study the crystal…

RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…

An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors nanostructures being compatible with the actual technology. Here we show…

In Fe-based superconductors, electron doping is often realized by the substitution of transition-metal atoms for Fe. In order to investigate how the electronic structure of the parent compound is influenced by Zn substitution, which…

We have studied zirconia films on a Rh(111) substrate with thicknesses in the range of 2-10 monolayers (ML) using scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Zirconia was deposited using a UHV-compatible…

Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 {\deg}C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films…

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix,…