相关论文: Dirac Fermion in Strongly-Bound Graphene Systems
Dirac semi-metals show a linear electronic dispersion in three dimension described by two copies of the Weyl equation, a theoretical description of massless relativistic fermions. At the surface of a crystal, the breakdown of fermion…
Magnetic texturing on the surface of a topological insulator allows the design of wave guide networks and beam splitters for domain-wall Dirac fermions. Guided by simple analytic arguments we model a Dirac fermion interferometer consisting…
Semi-Dirac fermions are massless in one direction and massive in the perpendicular directions. Such quasiparticles have been proposed in various contexts in condensed matter. Using first principles calculations, we identify a pair of…
We studied the transport properties of electrons in graphene as they are scattered by a double barrier potential in the presence of an inhomogeneous magnetic field. We computed the transmission coefficient and Goos-H\"anchen like shifts for…
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the…
A continuous deformation of a Hamiltonian possessing at low energy two Dirac points of opposite chiralities can lead to a gap opening by merging of the two Dirac points. In two dimensions, the critical Hamiltonian possesses a semi-Dirac…
We study the electronic band structures of massless Dirac fermions in symmetrical graphene superlattice with cells of three regions. Using the transfer matrix method, we explicitly determine the dispersion relation in terms of different…
Graphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer-scale and its properties can be custom-tailored by inserting various atoms into the graphene/SiC…
We study the tunneling behavior of Dirac fermions in graphene subjected to a double barrier potential profile created by spatially overlapping laser fields. By modulating the graphene sheet with an oscillating structure formed from two…
The tunability of the dielectric properties induced by the substrate driven interactions (SDI) and the exchange field (M) due to the ferro-magnetic impurities in graphene monolayer on transition metal dichalcogenide (TMDC) (viz., XY2 , X =…
We consider a noncommutative description of graphene. This description consists of a Dirac equation for massless Dirac fermions plus noncommutative corrections, which are treated in the presence of an external magnetic field. We argue that,…
A hybrid structure combining the advantages of topological insulator (TI), dielectric ferromagnet (FM), and graphene is investigated to realize the electrically controlled correlation between electronic and magnetic subsystems for…
The electronic structure of a single-layer graphene with a periodic Fermi velocity modulation is investigated by using an effective Dirac-like Hamiltonian. In a gapless graphene or in a graphene with a constant energy gap the modulation of…
We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the…
Inspired by the great development of graphene, more and more works have been conducted to seek new two-dimensional (2D) materials with Dirac cones. Although 2D Dirac materials possess many novel properties and physics, they are rare…
We consider a system of Dirac fermions in graphene submitted to a constant perpendicular magnetic field and scattered by a barrier potential. We show that our system can be used to establish a link with quantum optics through the…
Stacking two graphene layers twisted by the 'magic angle' $\theta \approx 1.1^\circ$ generates flat energy bands, which in turn catalyzes various strongly correlated phenomena depending on filling and sample details. At charge neutrality,…
By means of the first-principles calculations combined with the tight-binding approximation, the strain-induced semiconductor-semimetal transition in graphdiyne is discovered. It is shown that the band gap of graphdiyne increases from 0.47…
Graphene/h-BN has emerged as a model van der Waals heterostructure, and the band structure engineering by the superlattice potential has led to various novel quantum phenomena including the self-similar Hofstadter butterfly states. Although…
Having previously been the subject of decades of semiconductor research, cadmium arsenide has now reemerged as a topological material, realizing ideal three-dimensional Dirac points at the Fermi level. These topological Dirac points lead to…