相关论文: Electrical and thermal spin accumulation in german…

We predict that the magnetization direction of a ferromagnet can be reversed by the spin-transfer torque accompanying spin-polarized thermoelectric heat currents. We illustrate the concept by applying a finite-element theory of…

We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the…

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is…

We microscopically analyze thermal spin pumping mediated by magnons, at the interface between a ferromagnetic insulator and a non-magnetic metal, in the semiclassical regime. The generation of a spin current is discussed by calculating the…

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…

We demonstrate a room temperature spin dynamo where the precession of electron spins in ferromagnets driven by microwaves manifests itself in a collective way by generating d.c. currents. The current/power ratio is at least three orders of…

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…

Using micromagnetic simulations, we have investigated spin dynamics in a nanostructure in the presence of thermal fluctuations. In particular, we have studied the effects of a uniform temperature and of a uniform thermal gradient. In both…

We demonstrate the injection and detection of electrically and thermally generated spin currents probed in Co$_2$MnSi/Cu lateral spin valves. Devices with different electrode separations are patterned to measure the non-local signal as a…

The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…

We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel…

In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most…

Creating, manipulating and detecting spin polarized carriers are the key elements of spin based electronics. Most practical devices use a perpendicular geometry in which the spin currents, describing the transport of spin angular momentum,…

We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin…

The influence of a thermal gradient on the propagation properties of externally excited dipolar spin waves in a magnetic insulator waveguide is investigated. It is shown that spin waves propagating towards a colder region along the…

Thermoelectric effects result from the coupling of charge and heat transport, and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron-hole symmetry,…

The electron transport though ferromagnetic metal-superconducting hybrid devices is considered in the non-equilibrium Green's function formalism in the quasiclassical approximation. Attention if focused on the limit in which the exchange…

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…

In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…

We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…