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Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…

介观与纳米尺度物理 · 物理学 2016-08-10 Feng-Wu Chen , Mei-Yin Chou , Yiing-Rei Chen , Yu-Shu Wu

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and…

Understanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and…

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not…

材料科学 · 物理学 2015-11-18 Kaoru Kanayama , Kosuke Nagashio

We compute the transmission probability through rectangular potential barriers and p-n junctions in the presence of a magnetic and electric fields in bilayer graphene taking into account contributions from the full four bands of the energy…

介观与纳米尺度物理 · 物理学 2016-05-06 Ahmed Jellal , Ilham Redouani , Hocine Bahlouli

The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with…

The layer-resolved quantum transport response of a twisted bilayer graphene device is investigated by driving a current through the bottom layer and measuring the induced voltage in the top layer. Devices with four- and eight-layer…

介观与纳米尺度物理 · 物理学 2025-06-18 Matheus H. Gobbo Kuhn , L. A. Silva , D. A. Bahamon

We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate…

介观与纳米尺度物理 · 物理学 2018-12-26 Tao Hou , Guanghui Chen , Wang-Kong Tse , Changgan Zeng , Zhenhua Qiao

Electron transport in graphene under a laser-modulated barrier is studied in the presence of an energy gap, a scalar potential, and a uniaxial zigzag strain. The transfer-matrix approach is used with the boundary conditions to derive the…

介观与纳米尺度物理 · 物理学 2026-04-22 Hasna Chnafa , Clarence Cortes , David Laroze , Ahmed Jellal

Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically…

介观与纳米尺度物理 · 物理学 2017-11-08 Chunlei Qu , Chuanwei Zhang , Fan Zhang

The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…

介观与纳米尺度物理 · 物理学 2022-11-01 Angelika Knothe , Leonid I. Glazman , Vladimir I. Fal'ko

In a Bernal graphene bilayer, carbon atoms belong to two inequivalent sublattices A and B, with atoms that are coupled to the other layer by $p_\sigma$ bonds belonging to sublattice A and the other atoms belonging to sublattice B. We…

介观与纳米尺度物理 · 物理学 2018-09-05 Ahmed Missaoui , Jouda Jemaa Khabthani , Nejm-Eddine Jaidane , Didier Mayou , Guy Trambly de Laissardière

We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , Z. Klusek

We theoretically show that an interlayer bias voltage in the AB-stacked bilayer graphene nanoribbons with armchair edges induces an electric polarization along the ribbon. Both tight-binding and ab initio calculations consistently indicate…

介观与纳米尺度物理 · 物理学 2015-10-20 Ryo Okugawa , Junya Tanaka , Takashi Koretsune , Susumu Saito , Shuichi Murakami

We investigate the quantum tunneling of electrons in an AA-stacked bilayer graphene (BLG) $n$-$p$ junction and $n$-$p$-$n$ junction. We show that Klein tunneling of an electron can occur in this system. The quasiparticles are not only…

介观与纳米尺度物理 · 物理学 2013-12-04 Matthew Sanderson , Yee Sin Ang , Chao Zhang

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…

介观与纳米尺度物理 · 物理学 2010-12-30 Myung-Ho Bae , Zhun-Yong Ong , David Estrada , Eric Pop

We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density…

介观与纳米尺度物理 · 物理学 2020-03-18 Xianqing Lin , David Tomanek

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

We theoretically investigate the interaction of an ultrastrong femtosecond-long linearly polarized optical pulse with AB-stacked bilayer graphene. The pulse excite electrons from the valence into the conduction band, resulting in finite…

介观与纳米尺度物理 · 物理学 2021-08-11 Pardeep Kumar , Thakshila M. Herath , Vadym Apalkov , Mark I. Stockman

Using a four-band Hamiltonian, we study the phase boundary of spin-polarized-current state (SPCS) of interacting electrons in bilayer graphene. The model of spin-polarized-current state has previously been shown to resolve a number of…

强关联电子 · 物理学 2016-07-05 Xin-Zhong Yan , Yinfeng Ma , C. S. Ting