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We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…

介观与纳米尺度物理 · 物理学 2010-08-24 E. H. Hwang , S. Das Sarma

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

Graphene is considered a promising candidate to replace conventional transparent conductors due to its low opacity, high carrier mobility and flexible structure. Multi-layer graphene or stacked single layer graphenes have been investigated…

介观与纳米尺度物理 · 物理学 2011-12-07 Seunghyun Lee , Kyunghoon Lee , Chang-Hua Liu , Zhaohui Zhong

The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy…

介观与纳米尺度物理 · 物理学 2016-11-03 J. Li , K. Wang , K. J. McFaul , Z. Zern , Y. F. Ren , K. Watanabe , T. Taniguchi , Z. H. Qiao , J. Zhu

Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the…

材料科学 · 物理学 2017-09-01 Sam Shallcross , Sangeeta Sharma , Heiko B. Weber

We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model…

介观与纳米尺度物理 · 物理学 2013-12-05 S. P. Milovanovic , M. Ramezani Masir , F. M. Peeters

We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…

介观与纳米尺度物理 · 物理学 2013-06-18 Anya L. Grushina , Dong-Keun Ki , Alberto F. Morpurgo

The transport properties of a bilayer graphene are studied theoretically within a self-consistent Born approximation. The electronic spectrum is composed of $k$-linear dispersion in the low-energy region and $k$-square dispersion as in an…

介观与纳米尺度物理 · 物理学 2009-11-11 Mikito Koshino , Tsuneya Ando

Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs)…

Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and…

We present gate-controlled single, double, and triple dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal…

介观与纳米尺度物理 · 物理学 2018-08-29 Luca Banszerus , Benedikt Frohn , Alexander Epping , Daniel Neumaier , Kenji Watanabe , Takashi Taniguchi , Christoph Stampfer

We employ dual-gated 30{\deg}-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a…

介观与纳米尺度物理 · 物理学 2022-01-12 Giulia Piccinini , Vaidotas Mišeikis , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti , Sergio Pezzini

Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…

介观与纳米尺度物理 · 物理学 2016-03-15 Wlodzimierz Jaskolski , Marta Pelc , Leonor Chico , Andres Ayuela

We have performed a theoretical study of electronic transport in single and bilayer graphene based on the standard linear-response (Kubo) formalism and continuum-model descriptions of the graphene band structure. We are focusing especially…

介观与纳米尺度物理 · 物理学 2010-02-25 J. Z. Bernad , U. Zuelicke , K. Ziegler

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…

介观与纳米尺度物理 · 物理学 2015-07-03 Søren Schou Gregersen , Jesper Goor Pedersen , Stephen R. Power , Antti-Pekka Jauho

The influence of magnetic impurities on the transport properties of graphene is investigated in the regime of strong applied electric fields. As a result of electron-hole pair creation, the response becomes nonlinear and dependent on the…

介观与纳米尺度物理 · 物理学 2014-09-02 Arnaud Demion , Alberto D. Verga

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external…

介观与纳米尺度物理 · 物理学 2011-10-03 J. E. Padilha , Matheus P. Lima , A. J. R. da Silva , A. Fazzio

We study numerically cross conductances in a four-terminal all-graphene setup. We show that far away from the Dirac point current flows along zigzag directions, giving the possibility to guide the current between terminals using a tunable…

介观与纳米尺度物理 · 物理学 2009-11-01 Kimmo Sääskilahti , Ari Harju , Pirjo Pasanen

A graphene sheet partially covered with a bulk superconductor serves as a normal conductor--superconductor (NS) junction, in which electron transport is mainly governed by Andreev reflection (AR). As excess carriers induced over the covered…

介观与纳米尺度物理 · 物理学 2017-06-28 Yositake Takane , Katsuhide Yarimizu , Akinobu Kanda

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz