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We propose a simple model of charge and/or magnetic order formation in systems containing both localized and itinerant electrons coupled by the on-site, spin-dependent interaction that represents Coulomb repulsion and Hund's rule (a…

强关联电子 · 物理学 2009-11-10 Romuald Lemanski

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

The collective behavior of correlated electrons in the VO$_2-$interface layer of LaVO$_3$/SrTiO$_3$ heterostructure is studied within a quarter-filled $t_{2g}$-orbital Hubbard model on a square lattice. We argue that the ground state is…

强关联电子 · 物理学 2008-11-21 G. Jackeli , G. Khaliullin

We use the dynamical mean field method to investigate electronic properties of heterostructures in which finite number of Mott-insulator layers are embedded in a spatially infinite band-insulator. The evolution of the correlation effects…

强关联电子 · 物理学 2009-11-10 Satoshi Okamoto , Andrew J. Millis

Using spin-assisted ab-initio random structure searches, we explore an exhaustive quantum phase diagram of archetypal interfaced Mott insulators, i.e. lanthanum-iron and lanthanum-titanium oxides. In particular, we report that the charge…

强关联电子 · 物理学 2021-04-29 Carla Lupo , Evan Sheridan , Edoardo Fertitta , David Dubbink , Chris J. Pickard , Cedric Weber

In complex materials observed electronic phases and transitions between them often involves coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are…

We show that the interplay of strong Hubbard interaction $U$ and spin-orbit coupling $\lambda$ in systems with $d^4$ electronic configuration leads to several unusual magnetic phases. Most notably, we find that competition between…

强关联电子 · 物理学 2015-02-20 O. Nganba Meetei , William S. Cole , Mohit Randeria , Nandini Trivedi

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

In two-dimensional van der Waals magnetic materials, the interplay between magnetism and electron correlation can give rise to new ground states and lead to novel transport and optical properties. A fundamental question in these materials…

We present an anti-ferromagnetically ordered ground state of Na$_{2}$IrO$_{3}$ based on density-functional-theory calculations including both spin-orbit coupling and on-site Coulomb interaction $U$. We show that the splitting of $e_{g}'$…

强关联电子 · 物理学 2009-07-07 Hosub Jin , Heungsik Kim , Hogyun Jeong , Choong H. Kim , Jaejun Yu

Mott insulator plays a central role in strongly correlated physics, where the repulsive Coulomb interaction dominates over the electron kinetic energy and leads to insulating states with one electron occupying each unit cell. Doped Mott…

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…

强关联电子 · 物理学 2013-04-09 Axel Euverte , Simone Chiesa , Richard . T. Scalettar , George G. Batrouni

The Mott-Hubbard metal-insulator transition in the paramagnetic phase of the one-band Hubbard model has long been used to describe similar features in real materials like V$_2$O$_3$. Here we show that this transition is hidden inside a…

强关联电子 · 物理学 2009-11-10 R. Zitzler , N. Tong , Th. Pruschke , R. Bulla

Motivated by the recent experimental observation of a Mott insulating state for the layered Iridate Na2IrO3, we discuss possible ordering states of the effective Iridium moments in the presence of strong spin-orbit coupling and a magnetic…

强关联电子 · 物理学 2011-06-07 Hong-Chen Jiang , Zheng-Cheng Gu , Xiao-Liang Qi , Simon Trebst

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

Na$_2$IrO$_3$ was one of the first materials proposed to feature the Kane-Mele type topological insulator phase. Contemporaneously it was claimed that the very same material is in a Mott insulating phase which is described by the…

强关联电子 · 物理学 2017-12-04 Manuel Laubach , Johannes Reuther , Ronny Thomale , Stephan Rachel

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

The charge ordering phenomena in quasi two-dimensional 1/4-filled organic compounds (ET)_2X (ET=BEDT-TTF) are investigated theoretically for the $\theta$ and $\alpha$-type structures, based on the Hartree approximation for the extended…

强关联电子 · 物理学 2009-10-31 Hitoshi Seo

We present a theory for charge and heat transport parallel to the interfaces of a multilayer (ML) in which the interfacing gives rise the redistribution of the electronic charges. The ensuing electrical field couples self-consistently to…

强关联电子 · 物理学 2018-01-03 Veljko Zlatić , J. K. Freericks