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相关论文: Controlling Band Gap in Silicene Monolayer Using E…

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Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes which causes a band gap to open up around…

With considering the great success of scanning tunnelling microscopy (STM) studies of graphene in the past few years, it is quite surprising to notice that there is still a fundamental contradiction about the reported tunnelling spectra of…

We have investigated the electronic structure of charged bilayer and trilayer phoshporene using first-principles, density-functional-theory calculations. We find that the effective dielectric constant for an external electric field applied…

介观与纳米尺度物理 · 物理学 2017-08-09 Bukyoung Jhun , Cheol-Hwan Park

The band structure of the recently synthesized (3$\times$3) silicene monolayer on (4$\times$4) Ag(111) is investigated using density functional theory. A $k$-projection technique that includes the $k_\bot$-dependence of the surface bands is…

材料科学 · 物理学 2014-09-12 M. X. Chen , M. Weinert

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been…

We show that when graphene monolayers are disordered, the conductance exhibits a metallic-to-insulating transition, which opens the door to new electronic devices. The transition can be observed by driving the density or Fermi energy…

无序系统与神经网络 · 物理学 2009-12-07 M. Hilke

We study the band structure and transport property of a zigzag silicene nanoribbon when the electric fields are applied to the edges. It is found that a band bending could be induced and controlled by the antisymmetric edge fields, which…

介观与纳米尺度物理 · 物理学 2025-09-05 Wei-Tao Lu , Qing-Feng Sun , Hong-Yu Tian , Ben-Hu Zhou , Hong-Mei Liu

This work presents a theoretical study of the structural and electronic properties of bilayered silicon films under in-plane biaxial strain/stress using density functional theory. Atomic structures of the two-dimensional silicon films are…

材料科学 · 物理学 2016-06-29 Zhonghang Ji , Ruiping Zhou , Lok C. Lew Yan Voon , Yan Zhuang

The electronic structure of a single-layer graphene with a periodic Fermi velocity modulation is investigated by using an effective Dirac-like Hamiltonian. In a gapless graphene or in a graphene with a constant energy gap the modulation of…

材料科学 · 物理学 2014-12-02 Jonas R. F. Lima

Moir\'e systems featuring flat electronic bands exhibit a vast landscape of emergent exotic quantum states, making them one of the resourceful platforms in condensed matter physics in recent times. Tuning these systems via twist angle and…

介观与纳米尺度物理 · 物理学 2025-09-30 Jin Jiang , Qixuan Gao , Zekang Zhou , Cheng Shen , Mario Di Luca , Emily Hajigeorgiou , Kenji Watanabe , Takashi Taniguchi , Mitali Banerjee

High resolution angle resolved photoemission measurements and band structure calculations are carried out to study the electronic structure of BaMnSb$_2$. All the observed bands are nearly linear that extend to a wide energy range. The…

Understanding the nature of the interaction at the graphene/metal interfaces is the basis for graphene-based electron- and spin-transport devices. Here we investigate the hybridization between graphene- and metal-derived electronic states…

材料科学 · 物理学 2014-07-17 H. Vita , S. Boettcher , K. Horn , E. N. Voloshina , R. E. Ovcharenko , Th. Kampen , A. Thissen , Yu. S. Dedkov

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and…

We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a…

介观与纳米尺度物理 · 物理学 2015-05-19 Wenjuan Zhu , Deborah Neumayer , Vasili Perebeinos , Phaedon Avouris

Two-dimensional (2D) materials may exhibit intriguing band structure features (e.g., Dirac points), that lay far away from the Fermi level. They are, thus, not usable in applications. The semiconducting 2D material PC6 has two Dirac cones…

材料科学 · 物理学 2021-10-01 Maximilian A. Springer , Thomas Brumme , Agnieszka Kuc , Thomas Heine

As graphene became one of the most important materials today, there is a renewed interest on others similar structures. One example is silicene, the silicon analogue of graphene. It share some the remarkable graphene properties, such as the…

介观与纳米尺度物理 · 物理学 2014-10-06 T. Botari , E. Perim , P. A. S. Autreto , A. C. T. van Duin , R. Paupitz , D. S. Galvao

We study ballistic transport of Dirac fermions in silicene through arrays of barriers, of width $d$, in the presence of an exchange field $M$ and a tunable potential of height $U$ or depth $-U$. The spin- and valley-resolved conductances as…

介观与纳米尺度物理 · 物理学 2015-12-09 N. Missault , P. Vasilopoulos , V. Vargiamidis , F. M. Peeters , B. Van Duppen

We consider Berry phase mediated Nernst effect in silicene. The low energy band structure of silicene consists of two valleys near the Dirac points, similar to graphene. The low energy transport properties of the quasiparticles can be…

介观与纳米尺度物理 · 物理学 2014-02-26 I. Ahmed , M. Tahir , K. Sabeeh

Using first-principles density-functional theory, we study the electronic structure of multilayer graphene nanoribbons as a function of the ribbon width and the external electric field, applied perpendicular to the ribbon layers. We…

材料科学 · 物理学 2015-05-19 Bhagawan Sahu , Hongki Min , Sanjay K. Banerjee