相关论文: What Causes High Resistivity in CdTe

Temperature-dependent reflectivity measurements on the kagome metal CsV$_3$Sb$_5$ in a broad frequency range of $50-20000$ cm$^{-1}$ down to $T$=10 K are reported. The charge-density wave (CDW) formed below $T_{\rm CDW}$ = 94 K manifests…

Here we report on fabrication and low temperature magnetotransport measurements of quantum point contacts patterned from a novel two-dimensional electron system - CdTe/CdMgTe modulation doped heterostructure. From the temperature and bias…

The hydrogen interstitial and the substitutional Al_Zn, Ga_Zn and In_Zn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first principles calculations that…

We report the observation of resistivity saturation in lightly doped ($x\sim 0.10)$ as-grown samples of the electron-doped cuprate La$_{2-x}$Ce$_x$CuO$_4$ (LCCO). The saturation occurs at resistivity values roughly consistent with the…

We propose a simple model which explains experimental behavior of $c$-axis resistivity in layered High-T$_c$ superconductors at high fields in a limited temperature range. It is generally accepted that the in-plane dissipation at low…

Achieving efficient n-type doping in AlN, a representative ultrawide bandgap (UWBG) semiconductor, remains a longstanding challenge that limits its application in high-power electronics and deep-ultraviolet optoelectronics. Conventional…

In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the…

A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection…

The c-axis optical conductivity and d.c. resistivity are calculated within the t-J model assuming that the interlayer hopping is incoherent. Use is made of numerical results for spectral functions recently obtained with the…

Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model…

Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called…

Despite many advances towards improving the stability of organic photovoltaic devices, environmental degradation under ambient conditions remains a challenging obstacle for future application. Particularly conventional systems employing…

By using solid state reaction method we have fabricated the hole doped $La_{1-x}Sr_xFeAsO$ superconductors with Sr content up to 0.13. It is found that the sharp anomaly at about 150 K and the low temperature upturn of resistivity are…

Defects in semiconductor crystals can have significant detrimental effects on their performance as radiation detectors. Defects cause charge trapping and recombination, leading to lower signal amplitudes and poor energy resolution. We have…

Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their…

We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in…

We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0\leq x \leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-doping, accompanied by the disappearance of…

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of…

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…

Resonant inductive coupling is commonly seen as an undesired fundamental phenomenon emergent in densely packed resonant structures, such as nuclear magnetic resonance phased array detectors. The need to mitigate coupling imposes rigid…