相关论文: Weak antilocalization in HgTe quantum well with in…

We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the…

We have investigated the weak antilocalization (WAL) effect in the p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The…

Using analytical formulas as well as a finite-difference scheme, we investigate the magnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields…

Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide…

We study nonlocal resistance in an H-shaped two-dimensional HgTe/CdTe quantum well consist of injector and detector, both of which can be tuned in the quantum spin Hall or metallic spin Hall regime. Because of strong spin-orbit interaction,…

Here, we report the magneto-conductivity (up to 14Tesla and down to 5K) analysis of Bi2Te3 single-crystal. A sharp magneto-conductivity (MC) rise (inverted v-type cusp) is observed near H=0 due to the weak antilocalization (WAL) effect,…

The 2D weak localization effects at low temperatures T = (0.2-4.2)K have been investigated in nonsuperconducting sample Nd{1.88}Ce{0.12}CuO{4-d} and in the normal state of the superconducting sample Nd{1.82}Ce{0.18}CuO{4-d} for B>B_c2. The…

We discover weak antilocalization effect of two-dimensional electron gas with one electric subband occupied in the inversion layer on p-type HgCdTe crystal. By fitting the model of Iordanskii, Lyanda-Geller and Pikus to data at varies…

The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons…

The interference quantum correction to the conductivity in the gated double quantum well Al$_x$Ga$_{1-x}$As/GaAs/Al$_x$Ga$_{1-x}$As structures is studied experimentally. The consistent analysis of the interference induced positive…

The weak-localization contribution \delta\sigma(B) to the conductivity of a tunnel-coupled double-layer electron system is evaluated and its behavior in weak magnetic fields B perpendicular or parallel to the layers is examined. In a…

We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the…

The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals…

The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature…

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than…

A variational theory is presented of A$^{1-}$ and A$^{2-}$ centers, i.e. of a negative acceptor ion localizing one and two conduction electrons, respectively, in a GaAs/GaAlAs quantum well in the presence of a magnetic field parallel to the…

Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in…

Results of experimental study of the weak localization phenomenon in 2D system with artificial inhomogeneity of potential relief are presented. It is shown that the shape of the magnetoconductivity curve is determined by the statistics of…

The nonohmic conductivity of 2D hole gas (2DHG) in single $GaAsIn_{0.2}Ga_{0.8}AsGaAs$ quantum well structures within the temperature range of 1.4 - 4.2K, the carrier's densities $p=(1.5-8)\cdot10^{15}m^{-2}$ and a wide range of…

We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic…