The interference quantum correction to the conductivity in the gated double quantum well AlxGa1−xAs/GaAs/AlxGa1−xAs structures is studied experimentally. The consistent analysis of the interference induced positive magnetoconductivity allows us to find the interwell transition time τ12 and the electron dephasing time τϕ. It has been obtained that τ12−1 resonantly depends on the difference between the electron densities in the wells as predicted theoretically. The dephasing times have been determined under the conditions when one and both quantum wells are occupied. The surprising result is that the τϕ value in the one well does not depend on the occupation of the other one.
@article{arxiv.1007.3374,
title = {Dephasing and interwell transitions in double quantum well heterostructures},
author = {G. M. Minkov and A. V. Germanenko and O. E. Rut and A. A. Sherstobitov and A. K. Bakarov and D. V. Dmitriev},
journal= {arXiv preprint arXiv:1007.3374},
year = {2018}
}