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Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability,…

介观与纳米尺度物理 · 物理学 2025-06-09 G. Maffione , L. S. Farrar , M. Kapfer , K. Watanabe , T. Taniguchi , H. Aubin , D. Mailly , R. Ribeiro-Palau

We report a first principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. Non-equilibrium Green's…

计算物理 · 物理学 2015-06-04 Jingzhe Chen , Yibin Hu , Hong Guo

Usually the magnetochiral anisotropy related Josephson diode effect is assumed to be based on conventional two-dimensional electron gas, such as the InAs quantum well. Here we propose a graphene-based Josephson junction as a broadly…

超导电性 · 物理学 2023-12-06 Chuan-Shuai Huang

We investigated proximity-induced superconductivity in a graphene-insulating InO bilayer system through gate-controlled transport measurements. Distinct oscillations in the differential conductance are observed across both the electron and…

超导电性 · 物理学 2025-04-08 Yuxiao Wu , Udit Khanna , Eyal Walach , Efrat Shimshoni , Aviad Frydman

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and…

We investigate charge transport in pentacene-graphene nanojunctions employing density functional theory (DFT) electronic structure calculations and the Landauer transport formalism. The results show that the unique electronic properties of…

介观与纳米尺度物理 · 物理学 2013-02-26 Ivan A. Pshenichnyuk , Pedro B. Coto , Susanne Leitherer , Michael Thoss

In this study, we conduct a first-principles analysis to explore the structural and electronic properties of curved biphenylene/graphene lateral junctions (BPN/G). We start our investigation focusing on the energetic stability of BPN/G by…

We study charge transport in a source-channel-drain system with a time-varying applied gate potential acting on the channel. We calculate both the current flowing from the source into the channel and out of the channel into the drain. The…

介观与纳米尺度物理 · 物理学 2017-06-13 Eduardo C. Cuansing

An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order…

介观与纳米尺度物理 · 物理学 2015-06-12 H. Schmidt , J. C. Rode , C. Belke , D. Smirnov , R. J. Haug

One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In…

介观与纳米尺度物理 · 物理学 2014-03-28 Britton W. H. Baugher , Hugh O. H. Churchill , Yafang Yang , Pablo Jarillo-Herrero

A model is presented for $pn$ junction formation near metal-semiconductor contacts in two-dimensional semiconducting systems such as graphene. Carrier type switching occurs in a region near the metal-semiconductor junction when energy band…

介观与纳米尺度物理 · 物理学 2015-09-02 David A. Deen

The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a…

介观与纳米尺度物理 · 物理学 2010-10-07 Jun Yan , Michael S. Fuhrer

We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…

介观与纳米尺度物理 · 物理学 2007-08-28 J. R. Williams , L. DiCarlo , C. M. Marcus

Twisted van der Waals materials provide a tunable platform for investigating two-dimensional superconductivity and quantum phases. Using spectra-imaging scanning tunneling microscopy, we study the superconducting states in twisted bilayer…

Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive…

介观与纳米尺度物理 · 物理学 2017-03-08 François Léonard , Catalin D. Spataru , Michael Goldflam , David W. Peters , Thomas E. Beechem

We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands…

We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…

介观与纳米尺度物理 · 物理学 2015-05-13 V. Ryzhii , M. Ryzhii , A. Satou , T. Otsuji , N. Kirova

Thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful…

介观与纳米尺度物理 · 物理学 2015-05-28 Chang-Ran Wang , Wen-Sen Lu , Lei Hao , Wei-Li Lee , Ting-Kuo Lee , Feng Lin , I-Chun Cheng , Jian-Zhang Chen

We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…

强关联电子 · 物理学 2018-07-04 A. O. Sboychakov , A. V. Rozhkov , A. L. Rakhmanov , Franco Nori

Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…

材料科学 · 物理学 2014-12-04 Ryo Nouchi