相关论文: Temperature Coefficient of Resistivity in Amorphou…

In this paper, we develop an approximate theory of the temperature coefficient of resistivity (TCR) and conductivity based upon the recently proposed Microscopic Response Method. By introducing suitable approximations for the lattice…

The temperature coefficient of resistance (TCR) is one of the most fundamental properties of a material. Semiconductor materials exhibiting high TCR are promising candidates for applications in high-resolution thermal imaging for autonomous…

At sufficiently low temperatures, many quantum effects, such as weak localization, electron-electron interaction (EEI), and Kondo screening, can lead to pronounced corrections to the semiclassical electron transport. Although low…

The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions…

Multiple trapping and release (MTR) is a typical transport mechanism of electron carriers in amorphous and other disordered semiconductors where localized states are significant. Quantitative description of MTR, however, has been based on…

We present an ab initio calculation of the DC conductivity of amorphous silicon and hydrogenated amorphous silicon. The Kubo-Greenwood formula is used to obtain the DC conductivity, by thermal averaging over extended dynamical simulation.…

Chromium (Cr) is a transition metal element with 3$d$ orbital electrons. In most compounds containing Cr, due to the correlation effect, twofold features of localization and itinerancy are expected. The localization gives rise to a magnetic…

In several superconductors above the superconducting transition temperature Tc, the electrical resistivity is of the form {\rho} =AT^2. We show that there exists an empirical relation between Tc and A when both vary with an external…

CeRh$_2$As$_2$ is a rare unconventional superconductor ($T_c=0.26$ K) characterized by two adjacent superconducting phases for a magnetic field $H \parallel c$-axis of the tetragonal crystal structure. Antiferromagnetic order,…

Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the…

An analysis of experimental heat capacity at $T>T_{c}$ is presented for series of samples $(R)Ba_2Cu_3O_{6+x}$ (with $x$ close to optimal). For all samples the anomaly was discovered which occurred steadily in the interval 250-290 K…

V$_{1-x}$Al$_x$ is a representative example of highly resistive metallic alloys exhibiting a crossover to a negative temperature coefficient of resistivity (TCR), known as the Mooij correlation. Despite numerous proposals to explain this…

Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical…

Thermoelectric transport coefficients are determined for semiconductor quantum wires with weak thickness fluctuations. Such systems exhibit anomalies in conductance near 1/4 and 3/4 of 2e^2/h on the rising edge to the first conductance…

We present a functional-based approach to compute thermal expectation values for actions expressed in the $G-\Sigma$ formalism, applicable to any time sequence ordering. Utilizing this framework, we analyze the linear response to an…

The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the…

Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films first decreased from ~ 6.6x10-3 to 4.7x10-4 ohm-cm as the Si…

Pure amorphous solids are traditionally considered to set the lower bound of thermal conductivity due to their disordered atomic structure that impedes vibrational energy transport. However, the lower limits for thermal conductivity in…

Superconductors like other solids cannot relax instantaneously from thermally excited (disturbed) states to thermodynamic equilibrium. In this paper, relaxation of a multi-filamentary and of a thin film superconductor from thermal…

Hydrogenated amorphous silicon (a-Si:H) has garnered considerable attention in the semiconductor industry, particularly for its use in solar cells and passivation layers for high performance silicon solar cells, owing to its exceptional…