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相关论文: Mechanical cleaning of graphene

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Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of…

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by…

介观与纳米尺度物理 · 物理学 2009-11-13 K. I. Bolotin , K. J. Sikes , Z. Jiang , M. Klima , G. Fudenberg , J. Hone , P. Kim , H. L. Stormer

Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions…

介观与纳米尺度物理 · 物理学 2022-06-17 M. L. Palm , W. S. Huxter , P. Welter , S. Ernst , P. J. Scheidegger , S. Diesch , K. Chang , P. Rickhaus , T. Taniguchi , K. Wantanabe , K. Ensslin , C. L. Degen

A simple one-stage solution-based method was developed to produce graphene nanoribbons by sonicating graphite powder in organic solutions with polymer surfactant. The graphene nanoribbons were deposited on silicon substrate, and…

We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and…

介观与纳米尺度物理 · 物理学 2015-06-03 Thymofiy Khodkov , Freddie Withers , David Christopher Hudson , Monica Felicia Craciun , Saverio Russo

We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific…

介观与纳米尺度物理 · 物理学 2016-11-24 F. Giubileo , A. Di Bartolomeo , N. Martucciello , F. Romeo , L. Iemmo , P. Romano , M. Passacantando

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed…

介观与纳米尺度物理 · 物理学 2020-08-24 Sergio Pezzini , Vaidotas Mišeikis , Simona Pace , Francesco Rossella , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti

We present here a method for cleaning intermediate-size (5~50nm) contamination from highly oriented pyrolytic graphite. Electron beam deposition causes a continuous increase of carbonaceous material on graphene and graphite surfaces, which…

材料科学 · 物理学 2015-05-20 Ze Liu , Peter. Bøggild , Jia-rui Yang , Yao Cheng , Francois Grey , Yi-lun Liu , Li Wang , Quan-shui Zheng

Transition-metal (TM) atom-functionalized nanomaterials are promising candidates for hydrogen storage due to their ability to adsorb multiple hydrogen molecules through Kubas interactions. However, achieving efficient hydrogen desorption at…

材料科学 · 物理学 2025-08-14 Jongdeok Kim , Vikram Mahamiya , Massimiliano Di Ventra , Hoonkyung Lee

We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni…

介观与纳米尺度物理 · 物理学 2015-06-16 T. Moriyama , K. Nagashio , T. Nishimura , A. Toriumi

The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently…

介观与纳米尺度物理 · 物理学 2011-05-05 N. Tombros , A. Veligura , J. Junesch , J. J. van den Berg , P. J. Zomer , M. Wojtaszek , I. J. Vera-Marun , H. T. Jonkman , B. J. van Wees

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external…

介观与纳米尺度物理 · 物理学 2011-10-03 J. E. Padilha , Matheus P. Lima , A. J. R. da Silva , A. Fazzio

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…

介观与纳米尺度物理 · 物理学 2015-01-30 Wan Sik Hwang , Kristof Tahy , Xuesong Li , Huili , Xing , Alan C. Seabaugh , Chun-Yung Sung , Debdeep Jena

The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum…

We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the…

介观与纳米尺度物理 · 物理学 2014-05-28 Juan Sebastian Ardenghi , Pablo Bechthold , Estela Gonzalez , Paula Jasen , Alfredo Juan

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

材料科学 · 物理学 2010-02-11 Fengnian Xia , Damon B. Farmer , Yu-ming Lin , Phaedon Avouris

Heterostructures formed by stacking layered materials require atomically clean interfaces. However, contaminants are usually trapped between the layers, aggregating into blisters. We report a process to remove such blisters, resulting in…

介观与纳米尺度物理 · 物理学 2019-04-03 D. G. Purdie , N. M. Pugno , T. Taniguchi , K. Watanabe , A. C. Ferrari , A. Lombardo

Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion…

介观与纳米尺度物理 · 物理学 2017-05-16 Gang Luo , Zhuo-Zhi Zhang , Guang-Wei Deng , Hai-ou Li , Gang Cao , Ming Xiao , Guoping Guo , Guang-Can Guo

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa
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