相关论文: Mechanisms of enhanced orbital dia- and paramagnet…
Thermoelectric transport in strongly spin-orbit coupled two-dimensional Rashba system is studied using the exact solution of the linearized Boltzmann equation. Some unusual transport behaviors are revealed. We show that the electrical…
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries…
Paramagnetism or diamagnetism of a material are shown by parallel or antiparallel directions, respectively, of the induced magnetization under the influence of external magnetic field. Theoretical study of paramagnetic susceptibility and…
The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the…
We investigate thermoelectric properties of a ferromagnet-superconductor hybrid structure with Rashba spin-orbit interaction and delta function potential barrier at the interfacial layer. The exponential rise of thermal conductance with…
At ambient pressure, BiTeI is the first material found to exhibit a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher…
We carry out density functional theory calculation to enhance the Rashba spin splitting (RSS) of BiTeI by modifying the interlayer interaction. It is shown that RSS increases as the Te layer approaches to adjacent Bi layer or the I layer…
Conventional Rashba spin polarization is caused by the combination of strong spin-orbit interaction (SOI) and spatial inversion asymmetry. However, Rashba- and Dresselhaus-type spin-split states are predicted in LaOBiS$_2$ system by recent…
BiTeI exhibits large Rashba spin splitting due to its noncentrosymmetric crystal structure. The study of chemical doping effect is important in order to either tune the Fermi level or refine the crystal quality. Here, we report the…
A general analysis of Meissner effect and spin susceptibility of a uniform superconductor in an asymmetric two-component fermion system is presented in nonrelativistic field theory approach. We found that, the pairing mechanism dominates…
We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved…
Motivated by recent discovery of strongly spin-orbit coupled two-dimensional (2D) electron gas near the surface of Rashba semiconductors BiTeX (X=Cl, Br, I), we calculate thermoelectric responses of spin polarization in 2D Rashba model…
Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating…
We report the observation of Shubnikov-de Haas (SdH) oscillations in single crystals of the Rashba spin-splitting compound BiTeI, from both longitudinal ($R_{xx}(B)$) and Hall ($R_{xy}(B)$) magnetoresistance. Under magnetic field up to 65…
Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction…
Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient…
Spin transfer torque in magnetic structures occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium are absorbed by the interface. In this paper, considering the Rashba effect…
Using a two-dimensional Hubbard Hamiltonian for the three electronic bands crossing the Fermi level in Sr$_2$RuO$_4$ we calculate the band structure and spin susceptibility $\chi({\bf q}, \omega)$ in quantitative agreement with nuclear…
We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to…
We review our recent experimental results on the electronic nematic phase in electron- and hole-doped BaFe$_2$As$_2$ and FeSe. The nematic susceptibility is extracted from shear-modulus data (obtained using a three-point-bending method in a…