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Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, transition metal dichalcogenide monolayers, black phosphorene, and tellurene. Beyond pristine two-dimensional materials,…

介观与纳米尺度物理 · 物理学 2018-09-14 Dongchao Xu , Shuang Tang , Xu Du , Qing Hao

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

Carrier relaxation measurements in moir\'e materials offer a unique probe of the microscopic interactions, in particular the ones that are not easily measured by transport. Umklapp scattering between phonons is a ubiquitous…

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…

材料科学 · 物理学 2010-01-18 Viera Skakalova , Alan B. Kaiser , Jai Seung Yoo , Dirk Obergfell , Siegmar Roth

We design a hybrid graphene/hexagonal boron nitride superlattice monolayer and investigate its thermoelectric properties using density functional theory and Boltzmann transport equations with the relaxation time accurately treated by…

材料科学 · 物理学 2019-05-31 Zizhen Zhou , Huijun Liu , Dengdong Fan , Guohua Cao

Recently Kawashima has reported that, when wetted with alkanes, several forms of graphite and single-layer graphene exhibit superconductor-like properties above room temperature under ambient pressure [AIP Adv. 2013, 3, 052132;…

超导电性 · 物理学 2018-08-16 Myung-Hwan Whangbo

We investigate quantum corrections to the conductivity due to the interference of electron-electron (electron-phonon) scattering and elastic electron scattering in weakly disordered conductors. The electron-electron interaction results in a…

介观与纳米尺度物理 · 物理学 2009-11-10 A. Sergeev , M. Yu. Reizer , V. Mitin

The analysis of quantum corrections to magnetoconductivity of thin Au films responsible for by the effect of weak electron localization has made it possible to determine the temperature dependences of electron phase relaxation time in the…

无序系统与神经网络 · 物理学 2009-10-31 B. I. Belevtsev , Yu. F. Komnik , E. Yu. Beliayev

Using the linearized Boltzmann transport equation and perturbation theory, we analyze the reduction in the intrinsic thermal conductivity of few-layer graphene sheets accounting for all possible three-phonon scattering events. Even with…

介观与纳米尺度物理 · 物理学 2015-05-28 Dhruv Singh , Jayathi Y. Murthy , Timothy S. Fisher

The electron-phonon and spin-phonon coupling in typical high-T_C cuprates, like LSCO and HBCO are peaked for just a few q-vectors because of the 2-dimensional Fermi surface shape. The activation of few spin-phonon modes compensates for the…

超导电性 · 物理学 2016-03-31 T. Jarlborg

The electron band structure of graphene on SrTiO3 substrate has been investigated as a function of temperature. The high-resolution angle-resolved photoemission study reveals that the spectral width at Fermi energy and the Fermi velocity of…

We examine the nature of the transitions between the normal and the superconducting branches of superconductor-graphene-superconductor Josephson junctions. We attribute the hysteresis between the switching (superconducting to normal) and…

介观与纳米尺度物理 · 物理学 2013-08-09 I. V. Borzenets , U. C. Coskun , H. T. Mebrahtu , Yu. V. Bomze , A. I. Smirnov , G. Finkelstein

Phonon scattering by electrons, or "phonon-electron scattering", has been recognized as a significant scattering channel for phonons in materials with high electron concentration, such as thermoelectrics and nanoelectronics, even at room…

材料科学 · 物理学 2019-09-11 Sheng-Ying Yue , Runqing Yang , Bolin Liao

We report the enhancement of the thermoelectric power (TEP) in graphene with extremely low disorder. At high temperature we observe that the TEP is substantially larger than the prediction of the Mott relation, approaching to the…

介观与纳米尺度物理 · 物理学 2016-04-06 Fereshte Ghahari , Hong-Yi Xie , Takashi Taniguchi , Kenji Watanabe , Matthew S. Foster , Philip Kim

The unique optical properties of graphene, with broadband absorption and ultrafast response, make it a critical component of optoelectronic and spintronic devices. Using time-resolved momentum microscopy with high data rate and high dynamic…

We study inelastic energy relaxation in graphene for low energies to find out how electrons scatter with acoustic phonons and other electrons. By coupling the graphene to superconductors, we create a strong dependence of the measured…

介观与纳米尺度物理 · 物理学 2015-05-27 Juha Voutilainen , Aurelien Fay , Pasi Häkkinen , Janne K. Viljas , Tero T. Heikkilä , Pertti J. Hakonen

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

In recent years, phonon electron carrier dragging has emerged as an innovative approach for modulating energy transfer in low dimensional systems. In this Letter, we explore the fundamental mechanisms of electron-phonon coupling and the…

介观与纳米尺度物理 · 物理学 2025-06-10 Houssem Rezgui

It is known that electron scattering by surface polar phonons (SPPs) of the substrate reduces their mobility in supported graphene. However, there is no experimental evidence for contribution of drag of electrons by SPP to thermoelectric…

介观与纳米尺度物理 · 物理学 2016-09-07 S. V. Koniakhin , A. V. Nalitov

We present a review of theoretical investigations into the Kohn-Luttinger nonphonon superconductivity mechanism in various 3D and 2D repulsive electron systems described by the Fermi-gas, Hubbard, and Shubin-Vonsovsky models. Phase diagrams…

超导电性 · 物理学 2014-11-26 M. Yu. Kagan , V. V. Val'kov , V. A. Mitskan , M. M. Korovushkin