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相关论文: Native defects in hybrid C/BN nanostructures

200 篇论文

Both boron nitride (BN) and carbon (C) have sp, sp2 and sp3 hybridization modes, and thus resulting in a variety of BN and C polymorphs with similar structures, such as hexagonal BN (hBN) and graphite, cubic BN (cBN) and diamond. Here, five…

材料科学 · 物理学 2022-03-03 Kun Luo , Baozhong Li , Lei Sun , Yingju Wu , Yanfeng Ge , Bing Liu , Julong He , Bo Xu , Zhisheng Zhao , Yongjun Tian

Two-dimensional (2D) nitride materials such as hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C$_3$N$_4$), and beryllonitrene (BeN$_4$) have emerged as promising candidates for next generation electronic, optoelectronic, and…

材料科学 · 物理学 2025-10-16 Shreya G. Sarkar , Kuneh Parag Shah , Brahmananda Chakraborty

We have performed accurate \emph{ab--initio} pseudopotential calculations for the structural and electronic properties of ZnSe/GaAs(001) heterostructures with interface configurations accounting for charge neutrality prescriptions. Beside…

材料科学 · 物理学 2011-12-30 A. Stroppa , M. Peressi

We present a novel comprehensive first-principles theoretical study of the electronic properties and relative stabilities of edge-oxidized zigzag graphene nanoribbons. The oxidation schemes considered include hydroxyl, carboxyl, ether, and…

材料科学 · 物理学 2015-05-13 Oded Hod , Veronica Barone , Juan E. Peralta , Gustavo E. Scuseria

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…

材料科学 · 物理学 2022-05-09 Tamanna Joshi , Pratibha Dev

Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate…

介观与纳米尺度物理 · 物理学 2016-02-09 Thomas Aktor , Antti-Pekka Jauho , Stephen R. Power

By combining classical molecular dynamics simulations and density functional theory total energy calculations, we study the possibility of doping graphene with B/N atoms using low-energy ion irradiation. Our simulations show that the…

材料科学 · 物理学 2015-03-18 E. H. Åhlgren , J. Kotakoski , A. V. Krasheninnikov

The formation of graphen-nanotube composites addresses a few basic problems. First, both partners are good donors and acceptors of electrons, which significantly complicates the intermolecular interaction between them leading to a two-well…

材料科学 · 物理学 2009-01-26 Elena F. Sheka , Leonid A. Chernozatonskii

Accurate ab-initio pseudopotential calculations within density functional theory in the LDA approximation have been performed for structural properties and stability of ZnSe/GaAs(001) defected heterostructures. There is a strong…

材料科学 · 物理学 2011-12-30 A. Stroppa , M. Peressi

We use density functional theory based first-principles method to investigate the bandstructure and phase stability in the laterally grown hexagonal C$_x$(BN)$_{1-x}$, two-dimensional Graphene and $h$-BN hybrid nanomaterials, which were…

介观与纳米尺度物理 · 物理学 2016-03-21 Ransell D'Souza , Sugata Mukherjee

We perform density functional calculations on one-dimensional zigzag edge graphene nano-ribbons (ZGNRs) of different widths, with and without edge doping including semi-local exchange-correlations. Our study reveals that, although the…

材料科学 · 物理学 2008-06-13 Sudipta Dutta , Swapan K. Pati

In this paper, we propose a combined modeling of molecular mechanics (MM) and the tight-binding (TB) approach, which enables us to study the effect of factors such as external local forces, constraints, and vacancy defects on electronic…

计算物理 · 物理学 2021-03-11 Mahnoosh Rostami , Isa Ahmadi , Farhad Khoeini

Carbon fiber and graphene-based nanostructures such as carbon nanotubes (CNTs) and defective structures have extraordinary potential as strong and lightweight materials. A longstanding bottleneck has been lack of understanding and…

材料科学 · 物理学 2021-10-26 Qi Zhao , Jordan J. Winetrout , Yanxun Xu , Yusu Wang , Hendrik Heinz

Magnetic properties of graphenic carbon nanostructures, relevant for future spintronic applications, depend crucially on doping and on the presence of defects. In this paper we study the magnetism of the recently detected substitutional Ni…

介观与纳米尺度物理 · 物理学 2008-09-18 E. J. G. Santos , A. Ayuela , S. B. Fagan , J. Mendes Filho , D. L. Azevedo , A. G. Souza Filho , D. Sánchez-Portal

Recent experimental observations have reported that, rather than randomly distributed, nitrogen atoms may prefer to be located on one of the two sub-lattices of graphene. It has been suggested that such a preference may present a possible…

介观与纳米尺度物理 · 物理学 2015-09-30 James A. Lawlor , Mauro S. Ferreira

Defects change essentially not only electronic but also chemical properties of graphene being centers of its chemical activity. Their functionalization is a way to modify electronic and crystal structure of graphene which may be important…

材料科学 · 物理学 2009-01-05 D. W. Boukhvalov , M. I. Katsnelson

The electronic properties graphene nanoflakes (GNFs) with embedded hexagonal boron nitride (hBN) domains are investigated by combined {\it ab initio} density functional theory calculations and machine learning techniques. The energy gaps of…

介观与纳米尺度物理 · 物理学 2018-12-12 G. A. Nemnes , T. L. Mitran , A. Manolescu

We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk and at non-polar (10$\overline{1}$0) surface of wurtzite…

材料科学 · 物理学 2017-12-15 Sanjay Nayak , Mit H. Naik , Manish Jain , U. V. Waghmare , S. M. Shivaprasad

Lateral heterostructures of two-dimensional materials may exhibit various intriguing emergent properties. Yet when specified to the orientationally aligned heterojunctions of zigzag graphene and hexagonal boron nitride (hBN) nanoribbons,…

介观与纳米尺度物理 · 物理学 2015-09-22 Jiang Zeng , Wei Chen , Ping Cui , Dong-Bo Zhang , Zhenyu Zhang

Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…

材料科学 · 物理学 2026-05-27 Yujia Tian , Devesh R. Kripalani , Ming Xue , Kun Zhou