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The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic…

介观与纳米尺度物理 · 物理学 2014-09-26 Christoph Sürgers , Gerda Fischer , Patrick Winkel , Hilbert v. Löhneysen

Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy…

材料科学 · 物理学 2010-03-09 C. A. F. Vaz , J. Hoffman , A. -B. Posadas , C. H. Ahn

We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The…

Interest in planar Hall effect (PHE) sensors has re-emerged in recent years due to their promising potential for a wide range of applications, particularly in biotechnology. Sensor sensitivity can be enhanced by lowering the effective…

材料科学 · 物理学 2026-02-02 Agostina Lo Giudice , Augusto Román , Laura Beatriz Steren

We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system…

其他凝聚态物理 · 物理学 2026-05-27 Y. Fernandes , J. Geshev , A. M. H. de Andrade , A. D. C. Viegas

Anisotropic magnetoresistance (AMR) and related planar Hall resistance (PHR) are ubiquitous phenomena of magnetic materials. Although the universal angular dependences of AMR and PHR in magnetic polycrystalline materials with one order…

强关联电子 · 物理学 2022-01-11 X. R. Wang

A textured thin film of FeGe was grown by magnetron sputtering with a helimagnetic ordering temperature of TN = 276 +/- 2 K. From 5 K to room temperature a variety of scattering processes contribute towards the overall longitudinal and Hall…

强关联电子 · 物理学 2014-07-11 N. A. Porter , J. C. Gartside , C. H. Marrows

We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been…

超导电性 · 物理学 2009-11-13 V. Jovanovic , Z. Z. Li , F. Bouquet , L. Fruchter , H. Raffy

Ferromagnetic insulating garnet films with perpendicular magnetic anisotropy (PMA) are of great importance for the applications in spintronics. Tm3Fe5O12 (TmIG) with magnetoelastic anisotropy has been proven to exhibit PMA more easily than…

材料科学 · 物理学 2025-02-20 Yufeng Wang , Peng Zhou , Shuai Liu , Yajun Qi , Tianjin Zhang

Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…

SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 it has Tc of ~ 150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the…

材料科学 · 物理学 2011-06-15 Isaschar Genish , Yevgeny Kats , Lior Klein , James W. Reiner , M. R. Beasley

SrRuO3 is an itinerant ferromagnet with orthorhombic structure and uniaxial magnetocrystalline anisotropy - features expected to yield resistivity anisotropy. Here we explore changes in the resistivity anisotropy of epitaxial SrRuO3 films…

强关联电子 · 物理学 2009-11-17 Yishai Shperber , Isaschar Genish , James W. Reiner , Lior Klein

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively…

介观与纳米尺度物理 · 物理学 2017-05-10 Tanmoy Pramanik , Anupam Roy , Rik Dey , Amritesh Rai , Samaresh Guchhait , Hema CP Movva , Cheng-Chih Hsieh , Sanjay K Banerjee

We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO(001), as a function of film thickness. It was found that the epitaxial CFA films…

The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…

We prepared epitaxial ferromagnetic manganite films on bicrystal substrates by pulsed laser ablation. Their low- and high-field magnetoresistance (MR) was measured as a function of magnetic field, temperature and current. At low…

强关联电子 · 物理学 2009-10-31 W. Westerburg , F. Martin , S. Friedrich , M. Maier , G. Jakob

Experimental measurements show that the angular dependence of the anisotropic magnetoresistance (AMR) in L1$_0$ ordered FePt epitaxial films on the current orientation and magnetization direction is a superposition of the corresponding…

材料科学 · 物理学 2022-06-17 Y. Dai , Y. W. Zhao , L. Ma , M. Tang , X. P. Qiu , Y. Liu , Z. Yuan , S. M. Zhou

We present the Planar Hall effect studies on the Cu intercalated type-II Dirac semimetal PdTe$_{2}$. The electrical resistivity exhibits a positive field dependence both in perpendicular and parallel field directions, causing non-zero…

强关联电子 · 物理学 2024-06-19 Sonika , M. K. Hooda , Shailja Sharma , C. S. Yadav

We study an asymmetric in field magnetoresistance that is frequently observed in magnetic films and, in particular, the odd longitudinal voltage peaks that appear during magnetization reversal in ferromagnetic films, with out-of-plane…

强关联电子 · 物理学 2015-05-13 A. Segal , O. Shaya , M. Karpovski , A. Gerber

In Mn$_3$X (X=Sn, Ge) antiferromagnets domain walls are thick and remarkably complex because of the non-collinear arrangement of spins in each domain. A planar Hall effect (PHE), an electric field perpendicular to the applied current but…

材料科学 · 物理学 2020-12-18 Liangcai Xu , Xiaokang Li , Linchao Ding , Kamran Behnia , Zengwei Zhu