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We investigate theoretically the interplay between the effects of a perpendicular electric field and incommensurability at the interface on the electronic properties of a heterostructure of bilayer graphene and a semiconducting substrate…

介观与纳米尺度物理 · 物理学 2016-11-02 D. J. Leech , M. Mucha-Kruczyński

We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the…

强关联电子 · 物理学 2011-08-24 K. Zou , X. Hong , J. Zhu

We present measurements of the electronic compressibility, $K$, of bilayer graphene in both zero and finite magnetic fields up to 14 T, and as a function of both the carrier density and electric field perpendicular to the graphene sheet.…

介观与纳米尺度物理 · 物理学 2010-07-28 E. A. Henriksen , J. P. Eisenstein

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…

介观与纳米尺度物理 · 物理学 2010-06-09 Atindra Nath Pal , Arindam Ghosh

We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are…

强关联电子 · 物理学 2009-11-13 A. B. Kuzmenko , E. van Heumen , D. van der Marel , P. Lerch , P. Blake , K. S. Novoselov , A. K. Geim

We investigate the effect of shear and strain in graphene bilayers, under conditions where the distortion of the lattice gives rise to a smooth one-dimensional modulation in the stacking sequence of the bilayer. We show that strain and…

介观与纳米尺度物理 · 物理学 2016-11-03 J. Gonzalez

Phosphorene, the monolayer form of the (black) phosphorus, was recently exfoliated from its bulk counterpart. Phosphorene oxide, by analogy to graphene oxide, is expected to have novel chemical and electronic properties, and may provide an…

材料科学 · 物理学 2015-06-22 Gaoxue Wang , Ravindra Pandey , Shashi P. Karna

Recent intensive research on two-dimensional materials (2DMs) rekindle the interest in the intercalation of various atoms and molecules into layered compounds as a tool to manufacture 2DMs and tune their optoelectronic, magnetic and…

介观与纳米尺度物理 · 物理学 2025-07-10 Arkady V. Krasheninnikov , Yung-Chang Lin , Kazu Suenaga

The nature of electron correlations in bilayer graphene has been investigated. An analytic expression for the radial distribution function is derived for an ideal electron gas and the corresponding static structure factor is evaluated. We…

介观与纳米尺度物理 · 物理学 2015-05-20 D. S. L. Abergel , Tapash Chakraborty

Twisted bilayer graphene exhibits isolated, relatively flat electronic bands near charge neutrality when the interlayer rotation is tuned to specific magic angles. These small misalignments, typically below 1.1{\deg}, result in long-period…

介观与纳米尺度物理 · 物理学 2026-03-26 Antonio Palamara , Michele Pisarra , Antonello Sindona

A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in…

材料科学 · 物理学 2008-04-04 Y. G. Semenov , K. W. Kim , J. M. Zavada

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the…

介观与纳米尺度物理 · 物理学 2008-05-06 Eduardo V. Castro , N. M. R. Peres , T. Stauber , N. A. P. Silva

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…

介观与纳米尺度物理 · 物理学 2015-05-13 Kin Fai Mak , Chun Hung Lui , Jie Shan , Tony F. Heinz

The Raman shift, broadening, and relative Raman intensities of bilayer graphene are computed as functions of the electron concentration. We include dynamic effects for the phonon frequencies and we consider the gap induced in the band…

材料科学 · 物理学 2009-09-11 Paola Gava , Michele Lazzeri , A. Marco Saitta , Francesco Mauri

Tight-binding calculations predict that the AA-stacked graphene bilayer has one electron and one hole conducting bands, and that the Fermi surfaces of these bands coincide. We demonstrate that as a result of this degeneracy, the bilayer…

介观与纳米尺度物理 · 物理学 2012-11-30 A. L. Rakhmanov , A. V. Rozhkov , A. O. Sboychakov , Franco Nori

Using full potential density functional calculations within local density approximation (LDA), we report our investigation of the structural electronic properties of silicene (the graphene analogue of silicon), the strips of which has been…

介观与纳米尺度物理 · 物理学 2012-01-06 Harihar Behera , Gautam Mukhopadhyay

We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous…

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number…

介观与纳米尺度物理 · 物理学 2012-03-13 Kikuo Harigaya , Hiroshi Imamura

Strain induced band gap deformations of hydrogenated/fluorinated graphene and hexagonal BN sheet have been investigated using first principles density functional calculations. Within harmonic approximation, the deformation is found to be…

材料科学 · 物理学 2015-05-27 A. Bhattacharya , S. Bhattacharya , G. P. Das