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相关论文: Graphite and Hexagonal Boron-Nitride Possess the S…

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Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam…

材料科学 · 物理学 2015-05-29 S. Nakhaie , J. M. Wofford , T. Schumann , U. Jahn , M. Ramsteiner , M. Hanke , J. M. J. Lopes , H. Riechert

We study the radiative heat transfer between multilayer structures made by a periodic repetition of a graphene sheet and a hexagonal boron nitride (hBN) slab. Surface plasmons in a monolayer graphene can couple with a hyperbolic phonon…

光学 · 物理学 2017-07-05 Bo Zhao , Brahim Guizal , Zhuomin M. Zhang , Shanhui Fan , Mauro Antezza

Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed…

介观与纳米尺度物理 · 物理学 2015-02-23 Jeil Jung , Ashley DaSilva , Allan H. MacDonald , Shaffique Adam

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…

Based on first-principles density-functional theory calculations, we present a comparative study of the elec- tronic structures of ultranarrow zigzag graphene nanoribbons (ZGNRs) embedded in hexagonal boron nitride (BN) sheet and fully…

介观与纳米尺度物理 · 物理学 2015-08-05 Sun-Woo Kim , Hyun-Jung Kim , Jin-Ho Choi , Ralph H. Scheicher , Jun-Hyung Cho

The stacking orders in layered hexagonal boron nitride bulk and bilayers are studied using high-level ab initio theory (local second-order Moller-Plesset perturbation theory, LMP2). Our results show that both electrostatic and London…

材料科学 · 物理学 2015-06-16 Gabriel Constantinescu , Agnieszka Kuc , Thomas Heine

Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this…

材料科学 · 物理学 2016-05-04 G. Cassabois , P. Valvin , B. Gil

A dramatic difference between the vertical thermal conductance response of homogeneous and heterogeneous graphene/h-BN interfaces to external mechanical perturbations, is predicted. Homogeneous graphene and h-BN interfaces exhibit strong…

介观与纳米尺度物理 · 物理学 2026-04-30 Wenwu Jiang , Huasong Qin , Yilun Liu , Wengen Ouyang , Oded Hod , Michael Urbakh

Integration of individual two-dimensional materials into heterostructures is a crucial step which enables development of new and technologically interesting functional systems of reduced dimensionality. Here, well-defined lateral…

介观与纳米尺度物理 · 物理学 2018-06-19 Marin Petrović , Michael Horn-von Hoegen , Frank-J. Meyer zu Heringdorf

Substitutional carbon defects in hexagonal boron nitride (hBN) are prominent single photon emitters (SPEs), and their potential for spin activity ($S\geq1$) is particularly intriguing. While studies have largely focused on intra-layer…

材料科学 · 物理学 2025-06-03 Ignacio Chacon , Andrea Echeverri , Carlos Cardenas , Francisco Munoz

Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong…

When two-dimensional crystals are brought into close proximity, their interaction results in strong reconstruction of electronic spectrum and local crystal structure. Such reconstruction strongly depends on the twist angle between the two…

介观与纳米尺度物理 · 物理学 2025-10-27 C. R. Woods , P. Ares , H. Nevison-Andrews , M. J. Holwill , R. Fabregas , F. Guinea , A. K. Geim , K. S. Novoselov , N. R. Walet , L. Fumagalli

Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for…

Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN)…

材料科学 · 物理学 2023-02-28 Pierre Lechifflart , Fulvio Paleari , Davide Sangalli , Claudio Attaccalite

Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles in exploring two-dimensional (2D) electronics, photonics,…

介观与纳米尺度物理 · 物理学 2020-01-07 Yanan Wang , Jaesung Lee , Xu-Qian Zheng , Yong Xie , Philip X. -L. Feng

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other 2D materials to templating growth of molecular…

Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and…

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for many applications in photonics. Although its linear and nonlinear optical properties have been extensively studied, its interaction with…

Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we…

材料科学 · 物理学 2015-10-08 Y. Hattori , K. Watanabe , T. Taniguchi , K. Nagashio