相关论文: Pronounced Effect of pn-Junction Dimensionality on…
A formally exact expression for the tunneling current, for its separation into specular and diffuse components, and for its directionality, is given for a thick tunnel junction with rough interfaces in terms of the properties of…
We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source.…
Early work by the author with Prof. Ishibashi [Scott et al., J. Appl. Phys. 64, 787 (1988)] showed that switching kinetics in ferroelectrics satisfy a constraint on current transients compatible with d = 2.5 dimensionality. At that time…
Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter…
Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined…
Two-dimensional superconductivity has become a major frontier in condensed matter physics. It holds the key to the mechanism of high-temperature superconductors and offers an exceptional arena to stabilize emergent quantum states enabled by…
We calculate the tunneling magnetoresistance (TMR) of Fe|ZnSe|Fe|ZnSe|Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe|ZnSe|Fe simple junctions. The…
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…
We have calculated the linear magnetoconductance across a vertical parabolic Quantum Dot with a magnetic field in the direction of the current. Gate voltage and magnetic field are tuned at the degeneracy point between the occupancies N=2…
Tunneling conductance through two quantum dots, which are connected in series to left and right leads, is calculated by using the numerical renormalization group method. As the hopping between the dots increases from very small value, the…
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…
Topological quantum computation using non-Abelian Majorana zero modes localized in proximitized semiconductor nanowires requires careful electrostatic control of wire-junctions so as to manipulate and braid the zero modes enabling anyonic…
We investigate the dependence of switching current density on the junction sizes in the spin transfer torque nanopillar structures by using micromagnetic simulations. While the macro spin model predicts weak dependence of switching current…
Extensive studies on thin films indicated a generic cubic current-voltage $I-V$ dependence as a salient feature of charge transport by tunneling. A quick glance at $I-V$ data for molecular junctions suggests a qualitatively similar…
Topological superconductors can support localized Majorana states at their boundaries. These quasi-particle excitations have non-Abelian statistics that can be used to encode and manipulate quantum information in a topologically protected…
We study the interplay of Klein tunneling (= interband tunneling) between n-doped and p-doped regions in graphene and Andreev reflection (= electron-hole conversion) at a superconducting electrode. The tunneling conductance of an n-p-n…
We consider theoretically tunneling characteristic of a junction between a normal metal and a chain of coupled Majorana bound states generated at crossings between topological and non-topological superconducting sections, as a result of,…
The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication…
Utilizing Co/Al$_2$O$_3$/Co magnetic tunnel junctions (MTJs) with Co electrodes of different crystalline phases, a clear relationship between electrode structure and junction transport properties is presented. For junctions with one…
The dimensional transition in turbulent jets of a shear-thinning fluid is studied via direct numerical simulations. Our findings reveal that under vertical confinement, the flow exhibits a unique mixed-dimensional (or 2.5D) state, where…