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Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., $E_G\simeq 500$ meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on…

介观与纳米尺度物理 · 物理学 2016-06-28 Søren Schou Gregersen , Stephen R. Power , Antti-Pekka Jauho

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes which causes a band gap to open up around…

We consider the gap creation problem in an antidot graphene lattice, i.e. a sheet of graphene with periodically distributed obstacles. We prove several spectral results concerning the size of the gap and its dependence on different natural…

数学物理 · 物理学 2017-05-26 Jean-Marie Barbaroux , Horia Cornean , Edgardo Stockmeyer

Effects of antidot lattices on electronic structures of graphene and hexagonal BN (h-BN) are investigated using the first principles method based on density functional theory. For graphene, we find that when the antidot lattice is along the…

材料科学 · 物理学 2013-11-27 Aihua Zhang , Hao Fatt Teoh , Zhenxiang Dai , Yuan Ping Feng , Chun Zhang

Graphene sheets with regular perforations, dubbed as antidot lattices, have theoretically been predicted to have a number of interesting properties. Their recent experimental realization with lattice constants below 100 nanometers stresses…

介观与纳米尺度物理 · 物理学 2013-05-29 Joachim A. Fuerst , Thomas G. Pedersen , Mads Brandbyge , Antti-Pekka Jauho

Electronic structures of graphene sheet with different defective patterns are investigated, based on the first principles calculations. We find that defective patterns can tune the electronic structures of the graphene significantly.…

介观与纳米尺度物理 · 物理学 2015-05-19 H. Y. He , Y. Zhang , B. C. Pan

Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we…

材料科学 · 物理学 2013-01-11 Jiangtao Wu , Xinghua Shi , Yujie Wei

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or…

材料科学 · 物理学 2014-06-11 Liangzhi Kou , Feiming Hu , Binghai Yan , Thomas Frauenheim , Changfeng Chen

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…

介观与纳米尺度物理 · 物理学 2015-07-03 Søren Schou Gregersen , Jesper Goor Pedersen , Stephen R. Power , Antti-Pekka Jauho

Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with…

介观与纳米尺度物理 · 物理学 2008-06-24 Thomas G. Pedersen , Christian Flindt , Jesper Pedersen , Antti-Pekka Jauho , Niels Asger Mortensen , Kjeld Pedersen

Triangular and honeycomb lattices are dual to each other -- if we puncture holes into a featureless plane in a regular triangular alignment, the remaining body looks like a honeycomb lattice, and vice versa, if the holes are in a regular…

介观与纳米尺度物理 · 物理学 2018-11-21 Toshikaze Kariyado , Yongcheng Jiang , Hongxin Yang , Xiao Hu

Graphene lacks an intrinsic band-gap, which limits its use in electronic applications. Here we demonstrate that periodic arrays of topological defects can open and control a band-gap in a predictable manner governed by defect spacing and…

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…

介观与纳米尺度物理 · 物理学 2009-11-11 Edward McCann

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

We study nxn honeycomb superlattices of defects in graphene. The considered defects are missing p_z orbitals and can be realized by either introducing C atom vacancies or chemically binding simple atomic species at the given sites. Using…

材料科学 · 物理学 2015-05-14 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

The structure of finite-area topological defects in graphene is described in terms of both the direct honeycomb lattice and its dual triangular lattice. Such defects are equivalent to cutting out a patch of graphene and replacing it with a…

材料科学 · 物理学 2012-03-09 Eric Cockayne

Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides…

介观与纳米尺度物理 · 物理学 2011-10-27 Neerav Kharche , Saroj K. Nayak

Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable…

材料科学 · 物理学 2011-04-08 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of…

介观与纳米尺度物理 · 物理学 2015-05-13 Y. Qi , S. H. Rhim , G. F. Sun , M. Weinert , L. Li

We derive a way to diagnose band topology for graphene with triangular and/or honeycomb array of nanoholes directly from the lattice constant of superstructure $m\sqrt{3}\times m\sqrt{3}$ with integer $m$. Taking into account the $C_{6v}$…

介观与纳米尺度物理 · 物理学 2026-05-15 Yong-Cheng Jiang , Xing-Xiang Wang , Xiao Hu
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