相关论文: Temperature dependence of the resistance switching…

A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $\rho(T)$ curve shows…

The oxygen deficiency $\delta$ in YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) plays a crucial role for affecting high-temperature superconductivity. We applied (coincident) Doppler broadening spectroscopy of the electron-positron annihilation line…

Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a reversible bipolar switching between the two states is…

We have investigated the effect of Cu substitution in Eu2(Ir1-xCux)2O7 with the help of magnetic and transport property measurements. XPS measurement reveals that each Cu2+ converts Ir4+ to double amount of Ir5+ ions. The metal-insulator…

The influence of irradiation by electrons with energies of $0.5-2.5$\,MeV at temperatures of about $10$\,K on the basal-plane resistivity of the YBa$_2$Cu$_3$O$_{7-\delta}$ single crystals is investigated in the range from $T_c$ to…

Using focused helium ion beam (FHIB) irradiation, we fabricated in-plane, high-Tc YBCO Josephson junctions. By varying the dose of the irradiation, we tune the junction barriers from metallic (SNS) to insulating (SIS) and investigate how…

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact…

Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…

This study investigates the temperature-induced hysteretic behavior of resistivity and magnetoresistance in electrodeposited bismuth films, with a focus on their application as absorbers in transition-edge sensors (TESs) for X-ray…

We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic…

We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the…

We have investigated the temperature evolution of magnetism and its interrelation with structural parameters in perovskite-based layered compound Sr$_2$IrO$_4$, which is believed to be a $J_{eff}$ = 1/2 Mott insulator. The structural…

Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal…

We report the temperature dependence of transport and magnetic properties of La$_{1-x}$Ca$_x$VO$_3$ for x = 0.0, 0.1, 0.2, 0.3, 0.4 and 0.5. The system exhibits an insulator-to-metal transition concomitant with an…

Infrared spectroscopy has been used to investigate the temperature dependence and c-axis magnetic field dependence of the Josephson plasma resonance in optimally doped Tl2Ba2CaCu2O8 thin films, and underdoped YBa2Cu3O6.5 ortho - II single…

The effect of 16O-18O isotope exchange on the electric resistivity was studied for (La(1-y)Pr(y))0.7Ca0.3MnO3 ceramic samples. Depending on y, this mixed perovskite exhibited different types of low-temperature behavior ranging from…

Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…

We report the first study of electrical resistivity, magnetization, and specific heat on YbCo$_2$. The measurements on a single-phased sample of YbCo$_2$ bring no evidence of magnetic ordering down to 0.3 K in a zero magnetic field. The…

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…