相关论文: Temperature dependence of the resistance switching…

Thin film trilayer junction of La$%_{0.67}$Sr$_{0.33}$MnO$_3$ - SrTiO$_3$ - La$_{0.67}$Sr$_{0.33}$MnO$_3$ shows a factor of 9.7 change in resistance, in a magnetic field around 100 Oe at 14K. The junction magnetoresistance is bias and…

We study the resistivity of three-dimensional semimetals with linear dispersion in the presence of on-site electron-electron interaction. The well-known quadratic temperature dependence of the resistivity of conventional metals is turned…

Temperature-driven metal-insulator and pressure-driven insulator-metal transitions observed in(BEDT-TTF)8[Hg4X12(C6H5Y)2]] with X = Y = Br are studied through band structure calculations based on X-ray crystal structure determination and…

Structural and magnetization studies were carried out on Dy1-xYxCo5 [x = 0, 0.2, 0.4, 0.6, 0.8, 1] compounds which crystallize in the hexagonal CaCu5-type structure. Lattice parameters and unit-cell volume increase with Y concentration.…

We propose an analytical model devoted to explain the anisotropy of the electrical resistance observed below the critical temperature in granular high-Tc superconductors submitted to a magnetic field H. Reported experimental results…

The effect of annealing on the basal-plane electrical resistivity of the YBa$_2$Cu$_3$O$_{7-\delta}$ single crystals is studied in a broad range of oxygen contents. Within the framework of s-d scattering of electrons by phonons, an increase…

The resistivity and the Hall effect in the copper-oxide high-temperature superconductor YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ (YBCO) are remarkably anisotropic. Using a thin film of YBCO grown on an off-axis cut SrTiO$_3$ substrate allows one to…

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…

Studies of interlayer transport in layered metals have generally made use of zero temperature conductivity expressions to analyze angle-dependent magnetoresistance oscillations (AMRO). However, recent high temperature AMRO experiments have…

The presence of strong disorder can significantly impact electrical conduction in metallic systems. Here, we investigate the temperature dependence of the electrical resistivity, $\rho(T)$, in nonmagnetic single crystals of the…

It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…

Carrier injection performed in oxygen-deficient YBa2Cu3O7(YBCO) hetero-structure junctions exhibited tunable resistance that was entirely different with behaviors of semiconductor devices. Tunable superconductivity in YBCO junctions,…

The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their…

We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

At T_c-T<<T_c(i.e., near T_c), in order to demonstrate the condudction mechanism and temperature dependencies of the diamagnetic-shielding susceptibility and the penetration depth, we fabricated Ba_1_xBiO_3(BKBO) thin films and measured the…

The temperature dependence of ultrafast photoinduced reflectivity transients is reported in Nd$_{0.5}$Sr$_{0.5}$MnO$_{3}$ thin film. The photoinduced reflectivity shows a complex response with very different temperature dependences on…

Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…

In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…

Bipolar resistive switching (BRS) phenomenon has been demonstrated in Mn3O4 using Al (Aluminum)/Mn3O4/FTO (Fluorine doped Tin Oxide) Resistive Random Access Memory (RRAM) device. The fabricated RRAM device shows good retention, non volatile…

Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal…