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We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate…

We have studied the temperature dependence of the photoemission spectra of Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO) with $x=0.25$, 0.3 and 0.5. For $x=0.3$ and 0.5, we observed a gap in the low-temperature CE-type charge-ordered (CO) phase and a…

强关联电子 · 物理学 2009-11-13 K. Ebata , M. Hashimoto , K. Tanaka , A. Fujimori , Y. Tomioka , Y. Tokura

The crystal structure parameters and the low-temperature magnetic moment of the HTSC cuprates YBa2Cu3O6+d, Y1-xCaxBa2Cu3O6+d, and Nd1+xBa2-xCu3O6+d, x = 0.2 are recorded after quenching them from the temperature of oxidative annealing. The…

材料科学 · 物理学 2018-05-25 A. V. Fetisov , S. Kh. Estemirova

Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of La$_{0.350}$Pr$_{0.275}$Ca$_{0.375}$MnO$_3$ are reported in the temperature range of 77 to 340 K. The films, grown on lattice…

强关联电子 · 物理学 2009-11-13 Udai Raj Singh , S. Chaudhuri , Shyam K. Choudhary , R. C. Budhani , Anjan K. Gupta

The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop…

凝聚态物理 · 物理学 2009-10-31 V. Kiryukhin , B. G. Kim , V. Podzorov , S-W. Cheong , T. Y. Koo , J. P. Hill , I. Moon , Y. H. Jeong

Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nano-scaled, cost-effective, and environmentally sustainable sensor solutions. These…

For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by…

无序系统与神经网络 · 物理学 2007-05-23 A. Mobius

A systematic study of the weak- link behavior for YBa2Cu3O7-d polycrystalline samples has been done using the electrical resistivity and AC susceptibility techniques.The experiments were performed with two samples of similar grain, a sample…

超导电性 · 物理学 2016-08-31 H. Salamati , P. Kameli

We report on DC and pulsed electric field sensitivity of the resistance of mixed valent Mn oxide based La(5/8-y)Pr(y)Ca(3/8)MnO(3) (y = 0.4) single crystals as a function of temperature. The low temperature regime of the resistivity is…

强关联电子 · 物理学 2009-11-11 G. Garbarino , C. Acha , P. Levy , T. Y. Koo , S-W. Cheong

Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…

介观与纳米尺度物理 · 物理学 2016-03-28 Arthur Useinov , Chih-Huang Lai

Electrical resistivity as a function of temperature, pressure, and magnetic field was measured in high and low purity single crystals of BaVS$_3$ close to the critical pressure value $p_{cr}$$\approx$2 GPa, associated with the zero…

强关联电子 · 物理学 2007-12-21 N. Barišić , A. Akrap , H. Berger , L. Forró

Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control…

Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are…

介观与纳米尺度物理 · 物理学 2016-06-06 Alejandro Molina-Sánchez , Maurizia Palummo , Andrea Marini , Ludger Wirtz

Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…

材料科学 · 物理学 2018-05-09 V. V. Marchenkov , Yu. A. Perevozchikova , N. I. Kourov , V. Yu. Irkhin , M. Eisterer , T. Gao

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

强关联电子 · 物理学 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…

无序系统与神经网络 · 物理学 2007-05-23 Arindam Ghosh , A. K. Raychaudhuri , R. Sreekala , M. Rajeswari , T. Venkatesan

A new-type structural transition has been found in Li2RuO3 with honeycomb lattice of edge-sharing RuO6-octahedra. With decreasing temperature T, the electrical resistivity exhibits an anomalous increase at T=Tc~540 K, suggesting the (metal…

强关联电子 · 物理学 2015-06-25 Yoko Miura , Yukio Yasui , Masatoshi Sato , Naoki Igawa , Kazuhisa Kakurai

We have studied the temperature dependencies of the complex sheet conductance of 1-3 unit cell (UC) thick YBa2Cu3O7-x films sandwiched between semiconducting Pr0.6Y0.4Ba2Cu3O7-x layers at high frequencies. Experiments have been carried out…

超导电性 · 物理学 2015-06-24 V. A. Gasparov , G. Tsydynzhapov , I. E. Batov , Qi Li

We report an experimental study of the time dependence of resistivity of a La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ ultrathin film in order to elucidate the underlying mechanism for metal-insulator transition and colossal magnetoresistance CMR effect.…

强关联电子 · 物理学 2007-05-23 X. J. Chen , H. -U. Habermeier , C. C. Almasan

The resistivity around the ferromagnetic transition temperature in the double exchange model is studied by the Schwinger boson approach. The spatial spin correlation responsible for scattering of conduction electrons are taken into account…

强关联电子 · 物理学 2007-05-23 Satoshi Ishizaka , Sumio Ishihara