相关论文: Temperature dependence of the resistance switching…

In the endeavour of developing quantum memories, Er$^{3+}$:CaWO$_4$ has emerged as a promising rare-earth ion-doped (REID) crystal platform due to its long optical coherence times and compatibility with the 1550 nm telecommunications band.…

Spin crossover (SCO) molecules are promising bi-stable magnetic switches with applications in molecular spintronics. However, little is known about the switching effects of a single SCO molecule when it is confined between two metal…

Spin-dependent charge transport in magnetic tunnel junctions (MTJs) can be manipulated by a temperature gradient, which can be utilized for spintronic and spin caloritronic applications. Evaluation of the thermally induced phenomena…

It was recently demonstrated that in La_{2-x}Sr_{x}CuO_{4} the magnetic-field (H) dependence of the low-temperature thermal conductivity \kappa up to 16 T reflects whether the normal state is a metal or an insulator. We measure the H…

We report the Sr substitution effect in an antiferromagnetic insulator LaMnAsO. The Sr doping limit is $x\sim$ 0.10 under the synthesis conditions, as revealed by x-ray diffractions indicate. Upon Sr doping, the room-temperature resistivity…

We study the growth and electronic properties of a high temperature superconductor, YBa$_2$Cu$_3$O$_7$ (YBCO) in proximity of a magnetic material, La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO). High quality single crystalline films of YBCO and…

The temperature dependence of the real and imaginary parts of magnetic susceptibility of YBa2Cu3O7-{\delta} superconducting thin films were researched at the electron irradiation with the energy of 2{\cdot}10<4> eV in the magnetic field of…

The nature of in-plane resistive transition of high-quality c-axis oriented crystalline thin films of YBa2Cu3O7-delta have been studied under magnetic fields (H) applied along the c-direction over a wide range of doped holes, p, in the CuO2…

We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…

We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear…

We report the effect of the \emph{ab}-plane magnetic field $B$ up to $8\,\mathrm{T}$ on the resistivity $\rho(T)$ and fluctuation conductivity $\sigma'(T)$ in YBa$_2$Cu$_3$O$_{7-\delta}$ thin films. As expected, up to $\sim 2.5\,\mathrm{T}$…

The effect of pressure on the low-temperature states of the Re3Ge7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature dependent resistance of Re3Ge7 behaves…

This is the first study of the effect of pressure on transition metal dichalcogenides intercalated by atoms that order magnetically. Co$_{1/3}$NbS$_2$ is a layered system where the intercalated Co atoms order antiferromagnetically at T$_N$…

We report measurements of structural phase transition of four parent compounds $R$FeAsO ($R$ = La, Sm, Gd, and Tb) by means of low-temperature X-ray diffraction (XRD). Magnetic transition temperatures associated with Fe ions ($T_{N1}$) are…

Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS…

Aim: We present an improved database of temperature dependent rate coefficients for rotational state-to-state transitions in H$_{2}$O + H$_{2}$O collisions. The database includes 231 transitions between the lower $para$- and 210 transitions…

This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the…

A simple and low cost apparatus has been designed and built to measure the electrical resistivity, ($\rho$), of metal and semiconductors in 300-620 K temperature range. The present design is suitable to do measurement on rectangular bar…

Measurements of the DC resistivity of under-doped cuprate superconductors have revealed a metal--insulator transition at low temperatures when superconductivity is suppressed by a very large magnetic field, with the resistivity growing…