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相关论文: Femtosecond superradiance in multiple-section InGa…

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We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of SF pulses with increasing amplitude of injected current…

InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trench-like features and V-pits on the…

材料科学 · 物理学 2011-07-19 Jochen Bruckbauer , Paul R. Edwards , Tao Wang , Robert W. Martin

We show that superradiant emission (SR) in semiconductor laser diode structures is governed by the master equation of the form of Ginzburg-Landau equation or Gross-Pitaevskii equation for a phase transition to coherent matter state. We…

强关联电子 · 物理学 2015-03-19 D. L. Boiko , P. P. Vasil'ev

Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly…

材料科学 · 物理学 2007-05-23 S. F. Li , J. Schoermann , D. J. As , K. Lischka

Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as…

A theoretical investigation of the ultrafast processes and dynamics of the excited carriers upon irradiation of GaAs with femtosecond (fs) pulsed lasers is performed in conditions that induce material damage and eventually surface…

材料科学 · 物理学 2018-12-12 A. Margiolakis , G. D. Tsibidis , K. M. Dani , G. P. Tsironis

Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…

材料科学 · 物理学 2012-11-09 Pawel Strak , Pawel Kempisty , Stanislaw Krukowski

We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates.…

Recently, Yao et al. demonstrated the creation of coherent emissions in nitrogen gas with two-color (800 nm + 400 nm) ultrafast laser pulses [New J. Phys. 15, 023046 (2013)]. Based on this two-color scheme, here we report on systematic…

A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For…

介观与纳米尺度物理 · 物理学 2021-11-24 M. Otteneder , M. Hild , Z. D. Kvon , E. E. Rodyakina , M. M. Glazov , S. D. Ganichev

Large-supercell tight-binding calculations are presented for GaBi$_{x}$As$_{1-x}$/GaAs single quantum wells (QWs) with Bi fractions $x$ of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the…

材料科学 · 物理学 2014-03-18 Muhammad Usman , Eoin P. O'Reilly

Currently, considerable resurgent interest exists in the concept of superradiance (SR), i.e., accelerated relaxation of excited dipoles due to cooperative spontaneous emission, first proposed by Dicke in 1954. Recent authors have discussed…

介观与纳米尺度物理 · 物理学 2012-05-08 G. T. Noe , J. -H. Kim , J. Lee , Y. Wang , A. K. Wojcik , S. A. McGill , D. H. Reitze , A. A. Belyanin , J. Kono

Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers…

InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical…

Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the…

光学 · 物理学 2025-04-08 Yifan Zhao , Mona Jarrahi

The quantum cascade laser (QCL) has evolved to be a compact, powerful source of coherent mid-infrared (mid-IR) light. However, its fast gain dynamics strongly restricts the formation of ultrashort pulses. As such, the shortest pulses…

Mid-infrared spectral broadening is of great scientific and technological interest, which till date is mainly achieved using non-silica glass fibers, primarily made of tellurite, fluoride and chalcogenide glasses. We investigate broadband…

光学 · 物理学 2015-07-10 Nitu Borgohain , Milivoj Belić , S. Konar

Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates…

介观与纳米尺度物理 · 物理学 2011-11-08 Meg Mahat , Arup Neogi

Singly ionized nitrogen molecules in ambient air pumped by near-infrared femtosecond laser give rise to superradiant emission. Here we demonstrate coherent control of this superradiance by injecting a pair of resonant seeding pulses inside…

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