相关论文: Measurements of Nanoscale Domain Wall Flexing in a…
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the…
We present a quantitative investigation of magnetic domain wall pinning in thin magnets with perpendicular anisotropy. A self-consistent description exploiting the universal features of the depinning and thermally activated sub-threshold…
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted…
We study the magnetic properties of nanoscale magnetic films with large perpendicular anisotropy comparing polarization microscopy measurements on Co_28Pt_72 alloy samples based on the magneto-optical Kerr effect with Monte Carlo…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent…
Using the angular dependence of the planar Hall effect in GaMnAs ferromagnetic films, we were able to determine the distribution of magnetic domain pinning fields in this material. Interestingly, there is a major difference between the…
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall…
Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which…
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn…
The propagation of domain walls in a ferromagnetic film is largely determined by domain wall pinning at defects in the material. In this letter we map the effective potential landscape for domain wall pinning in Permalloy films by raster…
We combine magneto-optical imaging and a magnetic field pulse technique to study domain wall dynamics in a ferromagnetic (Ga,Mn)As layer with perpendicular easy axis. Contrary to ultrathin metallic layers, the depinning field is found to be…
Time-resolved Kerr microscopy is used to study the excitations of individual micron- scale ferromagnetic thin film elements in their remnant state. Thin (18 nm) square elements with edge dimensions between 1 and 10 $\mu$m form closure…
Although ferromagnetism is in general a long-range collective phenomenon, it is possible to induce local spatial variations of magnetic properties in ferromagnetic materials. For example, systematic variation of the exchange coupling…
We have performed spatially resolved Polar Magneto-Optical Kerr Effect Microscopy measurements on as-grown and annealed Ga0.95Mn0.05As thin films with tensile strain. We find that the films exhibit very strong perpendicular magnetic…
We report the direct observation of slow fluctuations of helical antiferromagnetic domains in an ultra-thin holmium film using coherent resonant magnetic x-ray scattering. We observe a gradual increase of the fluctuations in the speckle…
Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…
A model is studied for the theoretical description of nanoscale magnetic films with high perpendicular anisotropy. In the model the magnetic film is described in terms of single domain magnetic grains with Ising-like behavior, interacting…