相关论文: Strain relaxation models

A variational model for epitaxially strained films accounting for the presence of dislocations is considered. Existence, regularity and some qualitative properties of solutions are addressed.

X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile.…

In the present contribution we review basic mathematical results for three physical systems involving self-organising solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting,…

The epitaxial growth of complex oxide thin films provide three avenues to generate unique properties: the ability to influence the 3-dimensional structure of the film, the presence of a surface, and the generation of an interface. In all…

A variational model for epitaxially-strained thin films on rigid substrates is derived both by {\Gamma}-convergence from a transition-layer setting, and by relaxation from a sharp-interface description available in the literature for…

A numerical method for computation of heteroepitaxial growth in the presence of strain is presented. The model used is based on a solid-on-solid model with a cubic lattice. Elastic effects are incorporated using a ball and spring type…

Strain and strain adaption mechanisms in modern functional materials are of crucial importance for their performance. Understanding these mechanisms will advance innovative approaches for material properties engineering. Here we study the…

A strained epitaxial film deposited on a deformable substrate undergoes a morphological instability relaxing the elastic energy by surface diffusion. The nonlinear and nonlocal dynamical equations of such films with wetting interactions are…

We consider a model of a thin film elastically attached to a rigid substrate. In the case in which the film expands relative to the substrate and assuming certain non-linear elastic behavior of the film, expansion ridges may appear, in…

We examine the role of an imposed epitaxial strain e in enhancing or depressing the spinodal instability of an alloy thin film. Since the alloy film starts with an imposed strain, phase separation offers a mechanism to relieve it, but only…

A theoretical framework is developed to describe experiments on the structure of epitaxial thin films, particularly niobium on sapphire. We extend the hypothesis of dynamical scaling to apply to the structure of thin films from its…

High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered…

We consider a gradient flow modeling the epitaxial growth of thin films with slope selection. The surface height profile satisfies a nonlinear diffusion equation with biharmonic dissipation. We establish optimal local and global…

Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy…

We showed that a wetting layer in epitaxially strained thin films which decreases with increasing lattice mismatch strain arises due to the variation of nonlinear elastic free energy with film thickness. We calculated how and at what…

The structure and microstrucutre of fully-strained BiCrO3 thin films have been investigated by X-rays diffraction and transmission electron microscopy, at room temperature. Interestingly, three structural variants are simultaneously…

We have investigated the out-of-plane lattice relaxation related to the ferroelectric transitions in epitaxial BaTiO$_3$ (BTO) films using synchrotron X-ray diffraction. Under either compressive strain or tensile strain, there is evidence…

We introduce an off-lattice model with continuous particle distances and pair-potential interactions which allows for the efficient simulation of strained heteroepitaxial growth by means of kinetic Monte Carlo (KMC) simulations. We discuss…

In this paper we present a generalization of a simple solid-on-solid epitaxial model of thin films growth, when surface morphology anisotropy is provoked by anisotropy in model control parameters: binding energy and/or diffusion barrier.…

While structure refinement is routinely achieved for simple bulk materials, the accurate structural determination still poses challenges for thin films due on the one hand to the small amount of material deposited on the thicker substrate…