中文
相关论文

相关论文: Modified graphene with small BN domain: an effecti…

200 篇论文

Ab-initio calculations based on density functional theory (DFT) have been performed to study the optical properties of pure graphene and have been compared to that of individual boron (B), nitrogen (N) and BN co-doped graphene sheet. The…

介观与纳米尺度物理 · 物理学 2020-05-22 Pooja Rani , Girija S Dubey , V. K. Jindal

We calculate the diffusion barrier of fluorine adatoms on doped graphene in the diluted limit using Density Functional Theory. We found that the barrier $\Delta$ strongly depends on the magnitude and character of the graphene's doping…

介观与纳米尺度物理 · 物理学 2014-09-29 R. M. Guzmán-Arellano , A. D. Hernández-Nieves , C. A. Balseiro , Gonzalo Usaj

We propose that the strain induced effective pseudo-magnetic field in graphene can also be explained by a curl movement of the Dirac points, if the Dirac points can be regarded as a slowly varying function of position. We also prove that…

介观与纳米尺度物理 · 物理学 2015-03-17 Hua-Tong Yang

We study the electronic and transport properties of a graphene-based superlattice theoretically by using an effective Dirac equation. The superlattice consists of a periodic potential applied on a single-layer graphene deposited on a…

介观与纳米尺度物理 · 物理学 2015-02-26 Jonas R. F. Lima

The adhesion of graphene on slightly lattice-mismatched surfaces, for instance of hexagonal boron nitride (hBN) or Ir(111), gives rise to a complex landscape of sublattice symmetry-breaking potentials for the Dirac fermions. Whereas a gap…

材料科学 · 物理学 2015-06-03 Carmine Ortix , Liping Yang , Jeroen van den Brink

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…

材料科学 · 物理学 2015-05-27 Tianhua Yu , Chen-Wei Liang , Changdong Kim , Bin Yu

We study the electronic structures of ABA (Bernal) stacked multilayer graphenes in uniform perpendicular electric field, and show that the interplay of the trigonal warping and the potential asymmetry gives rise to a number of emergent…

介观与纳米尺度物理 · 物理学 2013-02-22 Takahiro Morimoto , Mikito Koshino

We show that charge doping can induce transitions between three distinct adsorbate phases in hydrogenated and fluorinated graphene. By combining ab initio, approximate density functional theory and tight binding calculations we identify a…

介观与纳米尺度物理 · 物理学 2014-10-10 Tim Wehling , Bernhard Grundkötter-Stock , Bálint Aradi , Thomas Niehaus , Thomas Frauenheim

Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive…

材料科学 · 物理学 2009-01-05 Z. Klusek , P. Dabrowski , P. Kowalczyk , W. Kozlowski , P. Blake , M. Szybowicz , T. Runka , W. Olejniczak

Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics…

The AB-stacked bilayer graphene (BLG) is a pure semiconductor whose band gap and properties can be tuned by various methods such as doping or applying gate voltage. Here we show an alternative method to control the electronic properties of…

材料科学 · 物理学 2017-02-06 Srimanta Pakhira , Kevin P. Lucht , Jose L. Mendoza-Cortes

We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of…

介观与纳米尺度物理 · 物理学 2026-05-14 Qifang Wan , Zhuocong Xiao , Ahmed Kursumovic , Judith. L. MacManus-Driscoll , Colm Durkan

We solve the Dirac equation, which describes charge massless chiral relativistic carriers in a two-dimensional graphene. We have identified and analysed a novel pseudospin-dependent scattering effect. We compute the tunneling conductance…

介观与纳米尺度物理 · 物理学 2012-11-21 Dima Bolmatov , D. V. Zavialov

The modulation of band gap in the two-dimensional carbon materials is of impor- tance for their applications as electronic devices. By first-principles calculations, we propose a model to control the band gap size of {\gamma}-graphyne. The…

介观与纳米尺度物理 · 物理学 2016-09-21 Xiaohui Deng , Jing Zeng , Mingsu Si , Wei Lu

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and…

At large commensurate angles, twisted bilayer graphene which holds even parity under sublattice exchange exhibits a tiny gap. Here, we point out a way to tune this tiny gap into a large gap. We start from comprehensive understanding of the…

介观与纳米尺度物理 · 物理学 2024-03-22 Xiu-Cai Jiang , Yi-Yuan Zhao , Yu-Zhong Zhang

We investigated proximity-induced superconductivity in a graphene-insulating InO bilayer system through gate-controlled transport measurements. Distinct oscillations in the differential conductance are observed across both the electron and…

超导电性 · 物理学 2025-04-08 Yuxiao Wu , Udit Khanna , Eyal Walach , Efrat Shimshoni , Aviad Frydman

Magic-angle twisted bilayer graphene (TBG) exhibits a captivating phase diagram as a function of doping, featuring superconductivity and a variety of insulating and magnetic states. The bands host Dirac fermions with a reduced Fermi…

强关联电子 · 物理学 2023-08-03 Julian Ingham , Tommy Li , Mathias S. Scheurer , Harley D. Scammell

Using ab initio methods, we propose a simple and effective way to substitutionally dope graphene sheets with Boron. The method consists of selectively exposing each side of the graphene sheet to different elements. We first expose one side…

材料科学 · 物理学 2009-11-13 Renato B. Pontes , A. Fazzio , Gustavo M. Dalpian

A theoretical model is presented to reveal the mechanism of B doping into graphene in the microwave plasma experiment choosing trimethylboron as the doping source (ACS NANO 6 (2012) 1970). The results show that the reason for B doping comes…

介观与纳米尺度物理 · 物理学 2016-09-21 Xiaohui Deng , Jing Zeng , Mingsu Si , Wei Lu