相关论文: Ultrafast Hole-Spin Dynamics in Optically Excited …

We extend our recent result for the spin-relaxation time due to acoustic electron-phonon scattering in degenerate bands with spin mixing [New J. Phys. 18, 023012 (2015)] to include interactions with optical phonons, and present a numerical…

A relaxation-function theory for the dynamic spin susceptibility in the $t$--$J$ model is presented. By a sum-rule-conserving generalized mean-field approximation (GMFA), the two-spin correlation functions of arbitrary range, the staggered…

The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between…

We demonstrate that optical illumination strongly influences spin transport in n-type GaAs. Specifically, increasing the power density of optical spin pumping results in a significant expansion of the spin diffusion profile. A further means…

We study the doping evolution of spin excitations in a 1D Hubbard model and its downfolded spin Hamiltonians, by using exact diagonalization combined with cluster perturbation theory. In all models, we observe hardening (softening) of spin…

We have employed time-dependent local-spin density theory to analyze the multipole spin and charge density excitations recently found in GaAs-AlGaAs quatum dots [C. Sch\"uller et al, Phys. Rev. Lett {\bf 80}, 2673 (1998)]. The overall…

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using…

Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such…

We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a…

In this paper we present an ab initio real-time analysis of free polarization decay and photon echo in extended systems. As a prototype material, we study bulk GaAs driven by ultra-short laser pulses of 10 fs (energy spread of 0.4 eV), with…

We present a real-time abinitio description of optical orientation in bulk GaAs due to the coupling with an ultrashort circular polarized laser source. The injection of spin polarized electrons in the conduction band is correctly…

We present a microscopic theory for transport of the spin polarized charge density wave with both electrons and holes in the $(111)$ GaAs quantum wells. We analytically show that, contradicting to the commonly accepted belief, the spin and…

The population dynamics of dark and bright excitons in (In,Ga)As/GaAs quantum dots is studied by two-color pump-probe spectroscopy in an external magnetic field. With the field applied in Faraday geometry and at T<20 K, the dark excitons…

We demonstrate coherent optical control of a single hole spin confined to an InAs/GaAs quantum dot. A superposition of hole spin states is created by fast (10-100 ps) dissociation of a spin-polarized electron-hole pair. Full control of the…

We examine spectral properties of doped holes dressed with surrounding spin cloud in the t-J model. These composite-hole excitations well characterize prominent band structures in the angle-resolved photoemission spectrum. In…

In this work we derive simple closed-form expressions for the dynamical friction acting on black holes moving through ultralight (scalar field) dark matter, covering both non-relativistic and relativistic black hole speeds. Our derivation…

Magneto-optical techniques have become essential tools in spintronics, enabling the investigation of spin dynamics in the ultrafast regime. A key challenge in this field has been to accurately isolate the contributions to magneto-optical…

Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is…

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly…

A novel spin orientation mechanism - dynamic electron spin polarization has been recently suggested in Phys. Rev. Lett. $\mathbf{125}$, 156801 (2020). It takes place for unpolarized optical excitation in weak magnetic fields of the order of…