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相关论文: Towards electron transport measurements in chemica…

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We study the electric and thermal transport of the Dirac carriers in monolayer graphene using the Boltzmann-equation approach. Motivated by recent thermopower measurements [F. Ghahari, H.-Y.~Xie, T. Taniguchi, K. Watanabe, M.~S.~Foster, and…

介观与纳米尺度物理 · 物理学 2016-05-03 Hong-Yi Xie , Matthew S. Foster

The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local…

介观与纳米尺度物理 · 物理学 2010-05-13 K. Pi , Wei Han , K. M. McCreary , A. G. Swartz , Yan Li , R. K. Kawakami

The atomic structure of nanomaterials is often studied using transmission electron microscopy. In addition to image formation, the energetic electrons may also cause damage while impinging on the sample. In a good conductor such as graphene…

材料科学 · 物理学 2019-09-18 Alexandru I. Chirita Mihaila , Toma Susi , Jani Kotakoski

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…

介观与纳米尺度物理 · 物理学 2012-07-26 X. Hong , K. Zou , A. M. DaSilva , C. H. Ahn , J. Zhu

We describe very fast electron dynamics for a graphene nanoribbon driven by a control electromagnetic field in the terahertz regime. The mobility as a function of bias possesses a large threshold value when entering a nonlinear transport…

介观与纳米尺度物理 · 物理学 2015-05-28 Danhong Huang , Godfrey Gumbs , O. Roslyak

We present exact analytical and numerical results for the electronic spectra and the Friedel oscillations around a substitutional impurity atom in a graphene lattice. A chemical dopant in graphene introduces changes in the on-site potential…

The main goal of our study was investigation of the influence of the deformations (sufficiently large for the establishing the non-zero gap) on electrotransport properties of impure graphene. To achieve this purpose, we implemented the…

介观与纳米尺度物理 · 物理学 2017-12-27 Igor Yu. Sagalianov , Yuriy I. Prylutskyy , Taras M. Radchenko , Valentyn A. Tatarenko

Among the different strategies used to induce the opening of a band gap in graphene, one common practice is through chemical doping. While a gap may me opened in this way, disorder-induced scattering is an unwanted side-effect that impacts…

介观与纳米尺度物理 · 物理学 2016-06-22 James A Lawlor , Claudia G Rocha , Vanessa Torres , Andrea Latgé , Mauro Ferreira

We present a theoretical description of the electronic properties of graphene in the presence of disorder, electron-electron interactions, and particle-hole symmetry breaking. We show that while particle-hole asymmetry, long-range Coulomb…

强关联电子 · 物理学 2009-11-11 N. M. R. Peres , F. Guinea , A. H. Castro Neto

Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

介观与纳米尺度物理 · 物理学 2012-03-08 A. K. M. Newaz , Yevgeniy S. Puzyrev , Bin Wang , Sokrates T. Pantelides , Kirill I. Bolotin

In this paper, the work function of graphene doped by different metal adatoms and at different concentrations is investigated. Density functional theory is used to maximize the reduction of the work function. In general, the work function…

We present ab-initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for…

介观与纳米尺度物理 · 物理学 2015-12-15 Falco Hüser , Gemma C. Solomon

We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a…

介观与纳米尺度物理 · 物理学 2014-04-15 Jan Dauber , Bernat Terrés , Christian Volk , Stefan Trellenkamp , Christoph Stampfer

Two-dimensional (2D) materials represented by graphene stand out in future electrical industry and have been widely studied. As a commonly existing factor in electronic devices, the electric field has been extensively utilized to modulate…

计算物理 · 物理学 2022-08-17 E Zhou , Donghai Wei , Jing Wu , Guangzhao Qin , Ming Hu

We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice…

介观与纳米尺度物理 · 物理学 2011-04-18 A. Ferreira , Xiangfan Xu , Chang-Lin Tan , Sukang Bae , N. M. R. Peres , Byung-Hee Hong , Barbaros Ozyilmaz , A. H. Castro Neto

In this paper, the effect of B and N doping on the phonon induced thermal conductivity of graphene has been investigated. This study is important when one has to evaluate the usefulness of electronic properties of B and N doped graphene. We…

Graphene quantum dots are promising candidates for qubits due to weak spin-orbit and hyperfine interactions. The hyperfine interaction, controllable via isotopic purification, could be the key to further improving the coherence. Here, we…

Graphene modifications with oxygen or hydrogen are well known in contrast to carbon attachment to the graphene lattice. The chemical modification of graphene sheets with aromatic diazonium ions (carbon attachment) is analyzed by confocal…

The chapter combines analytical (statistical-thermodynamic and kinetic) with numerical (Kubo-Greenwood-formalism-based) approaches used to ascertain an influence of the configurations of point (impurities, vacancies) and line (grain…

介观与纳米尺度物理 · 物理学 2014-06-04 T. M. Radchenko , V. A. Tatarenko , I. Yu. Sagalianov , Yu. I. Prylutskyy

Controlling the metal-insulator transition in graphene-based material is a crucial topic as it directly impacts its potential applications. Inspired by recent experiments, we study the effects of doping and bond disorder on metal-insulator…

强关联电子 · 物理学 2024-01-24 Kaiyi Guo , Ying Liang , Tianxing Ma