相关论文: Gaps tunable by electrostatic gates in strained gr…

Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking…

Interactions between stacked two-dimensional (2D) atomic crystals can radically change their properties, leading to essentially new materials in terms of the electronic structure. Here we show that monolayers placed on an atomically flat…

Using a tight-binding model, we study a line defect in graphene where a bulk energy gap is opened by sublattice symmetry breaking. It is found that sublattice symmetry breaking may induce many configurations that correspond to different…

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

Realizing flexible strain sensor with high sensitivity and tunable gauge factor is a challenge. To meet this challenge, we report an ionic liquid gated three-dimensional graphene field effect strain sensor. The charge carrier concentration…

We study a suspended graphene sheet subject to the electric field of a gate underneath. We compute the elastic deformation of the sheet and the corresponding effective gauge field, which modifies the electronic transport. In a clean system…

Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that…

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandstructure is dramatically deformed and the degeneracy of the…

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to…

Electron transport in graphene under a laser-modulated barrier is studied in the presence of an energy gap, a scalar potential, and a uniaxial zigzag strain. The transfer-matrix approach is used with the boundary conditions to derive the…

Pseudo-magnetic field (PMF) in deformed graphene has been proposed as a promising and flexible method to quantum-confine electronic states and create gaps in the local density of states. Motivated by this perspective, we numerically analyze…

The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical…

We study the electronic properties of rippled freestanding graphene membranes under central load from a sharp tip. To that end, we develop a gauge field theory on a honeycomb lattice valid beyond the continuum theory. Based on the proper…

This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The…

A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation…

We propose a straightforward and effective approach to design, by strain-engineering, photonic topological insulators supporting high quality factors edge states. Chiral strain-engineering creates opposite synthetic gauge fields in two…

Straintronic devices made of carbon-based materials have been pushed up due to the graphene high mechanical flexibility and the possibility of interesting changes in transport properties. Properly designed strained systems have been…

The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $\Delta$. Dielectric breakdown limits the…

The strain fields of periodically buckled graphene induce a periodic pseudo-magnetic field (PMF) that modifies the electronic band structure. From the geometry, amplitude, and period of the periodic pseudo-magnetic field, we determine the…