相关论文: Luminescence decay dynamics of germanium nanocryst…

Silicon nanocrystals are studied by time-resolved fluorescence spectroscopy. After laser excitation the bright and dark exciton ground state levels are populated at random, but subsequently the decay curves reveal a thermalization between…

The focus of this paper is the vanishing of the thermal expansion in certain diamond-like semiconductors. In silicon becomes zero at T = 122. K. In germanium the situation is less clear. Previous investigations show that in natural…

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C.…

Laser cooling of matter through anti-Stokes photoluminescence, where the emitted frequency of light exceeds that of the impinging laser by virtue of absorption of thermal vibrational energy, has been successfully realized in condensed…

An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of…

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…

We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a…

Laser melting of semiconductors has been observed for almost 40 years; surprisingly, it is not well understood where most theoretical simulations show a laser-induced thermal process. $\textit{Ab initio}$ nonadiabatic simulations based on…

The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…

Scintillation characteristics of a thallium doped sodium iodide (NaI(Tl)) crystal with a dimension of 0.6 x 0.6 x 2 cm3 are studied by attaching a silicon photomultiplier (SiPM) direct to the crystal over a temperature range from 93 to 300…

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air.…

Origin of room temperature visible photoluminescence (PL) from defect free germanium (Ge) nanoparticles have been discussed here. The Ge nanoparticles produced by laser-induced etching technique show broad visible PL around 2.0 - 2.2 eV at…

One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…

We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…

Lead halide perovskite nanocrystals (NCs) in a glass matrix combine excellent optical properties and stability against environment. The spectral and temporal characteristics of photoluminescence from CsPbBr$_3$ and CsPb(Cl,Br)$_3$…

We study the excitonic recombination dynamics in an ensemble of (9,4) semiconducting single-wall carbon nanotubes by high sensitivity time-resolved photo-luminescence experiments. Measurements from cryogenic to room temperature allow us to…

The thermoelectric properties in one- and two-dimensional silicon and germanium structures have been investigated using first-principle density functional techniques and linear response for the thermal and electrical transport. We have…

The reliable measurement and accurate control of the temperature within nanophotonic devices is a key prerequisite for their application in both classical and quantum technologies. Established approaches use sensors that are attached in…

The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set…

Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimise their functionality for devices and applications. Here we report…