相关论文: Fe2+:ZnMgSe single crystals, a new material for ac…
Obtained is a new thermostable material for active elements of tunable IR-lasers - Zn1-xMgxSe:Cr2+ single crystals. The position of the absorption band of Cr2+ ions in wurtzite-type Zn0.8Mg0.2Se matrix is established.
Doped semiconductor crystals of solid solution $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ were grown by the high-pressure Bridgman method covering the range of its existence as a zinc blende crystal structure. The concentration of Fe-impurities was…
In this study, binary $ZnSe:Fe^{2+}$ crystals and ternary $Zn_{1-x}Mg_{x}Se:Fe^{2+}$ crystals $(0 < x < 0.6)$ were grown by the vertical Bridgman method in graphite crucibles under high argon pressure. A comparative characterization of the…
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just…
In this study we present our preliminary report on the scintillation properties of new Ce-doped Tl2LaBr5 single crystal. Two zones vertical Bridgman technique is used for the growth of this compound. Pure and Ce-doped samples showed maximum…
We report the compact and robust coherent source operating in mid-IR based on Fe:ZnSe chalcogenide gain medium optically pumped by Er:ZBLAN fiber laser. The output power of 2.1 W with 59% slope efficiency with respect to absorbed pump power…
A new approach to grow FeSe1-xTex single crystals with optical zone-melting technique was successfully employed. Crystals with actual composition 0.4 < x < 1.0 all show high crystallinity with no phase separation. The ability to visually…
Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains…
Non-linear optical characteristics of a new BaGa2GeSe6 crystal were numerically studied and compared with well-known mid-IR nonlinear crystals ZnGeP2, GaSe, and AgGaSe2.The calculations demonstrated for the new crystal to be probably the…
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…
Supercontinuum generation is performed in the bulk semiconductor tellurium (Te) with a high-power picosecond CO$_2$ laser at peak intensities up to 20 GW/cm$^2$. The spectrum spans from the second harmonic of the pump at 5.3 $\mu$m to 32…
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration is fixed at 6%) grown by low temperature molecular beam epitaxy (LT-MBE).Reflection high-energy…
TlSr2I5: Eu2+ is a newly discovered scintillator and show promising scintillation properties for X- and {\gamma}-rays spectroscopy applications. Two zones vertical Bridgman technique is used for the growth of this scintillator. Luminescence…
We report the generation of narrow-linewidth 637.2 nm laser by single-pass sum-frequency generation (SFG) of two infrared lasers at 1560.5 nm and 1076.9 nm in PPMgO:LN crystal. Over 8.75 W of single-frequency continuously tunable 637.2 nm…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of 1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap…