相关论文: Fine structure of "zero-mode" Landau levels in HgT…
We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges…
We present far-infrared magnetospectroscopy measurements of a HgTe quantum well in the inverted band structure regime over the temperature range of 2 to 60 K. The particularly low electron concentration enables us to probe the temperature…
Landau level spectroscopy has been employed to probe the electronic structure of the valence band in a series of p-type HgTe/HgCdTe quantum wells with both normal and inverted ordering of bands. We find that the standard axial-symmetric…
Using analytical formulas as well as a finite-difference scheme, we investigate the magnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields…
The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological…
We present both the experimental and theoretical investigation of a non-trivial electron Landau levels shift in magnetic field in wide ~20 nm HgTe quantum wells: Landau levels split under magnetic fields but become degenerate again when…
We present a theoretical study of the magnetic band structure of conduction and valence states in Quantum Well Wires in high magnetic fields. We show that hole mixing results in a very complex behavior of valence edge states with respect to…
The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the $14$-band ${\bf k}\cdot{\bf p}$ approach without making the axial…
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom…
We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. This device had excess n type doping and as a result. The…
The influence of bulk inversion asymmetry in [001] and [013] grown HgTe quantum wells is investigated theoretically. The bulk inversion asymmetry leads to an anti-crossing gap between two zero-mode Landau levels in a HgTe topological…
In two-dimensional hole systems confined to wide GaAs quantum wells, where the heavy- and light- hole states are close in energy, we observe a very unusual crossing of the lowest two Landau levels as the sample is tilted in magnetic field.…
In spite of a large quantity of papers devoted to the mangetoluminescence from CdTe/(Cd,Mg)Te, quantum wells there have been no attempts to analyze it on the basis of the band-structure calculations. This has been proposed in the present…
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes…
Two-dimensional systems in magnetic fields host rich physics, most notably the quantum Hall effect arising from Landau level quantization. In a broad class of two-dimensional models, flat bands with topologically nontrivial band…
Transition metal dichalcogenides (TMDs) exhibit unconventional Landau level (LL) spectra that cannot be fully captured by an effective mass approximation or a minimal two-band Dirac model. Namely, TMDs show an anomalous, upward-sloping…
Subband structure and depolarization shifts in an ultra-high mobility GaAs/Al_{0.24}Ga_{0.76}As quantum well are studied using magneto-infrared spectroscopy via resonant subband Landau level coupling. Resonant couplings between the 1st and…
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing…
The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase…
We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at…