相关论文: Valley-Orbit Photocurrents in (111)-oriented Si-MO…
We theoretically demonstrate a simple way to significantly enhance the spin/valley polarizations and tunnel- ing magnetoresistnace (TMR) in a ferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying a circularly polarized…
We propose a theory of optically-induced currents in dielectrics and wide-gap semiconductors exposed to a non-resonant ultrashort laser pulse with a stabilized carrier-envelope phase. In order to describe strong-field electron dynamics,…
We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…
The photovoltaic effect in a Weyl semimetal due to the adiabatic quantum phase is studied. We particularly focus on the case in which an external ac electric field is applied to the semimetal. In this setup, we show that a photocurrent is…
2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that…
A dc electric current can be induced in a hybrid semiconductor-superconductor system under illumination it by a circularly polarized light with the frequency below the energy of semiconductor interband transitions. In conditions when the…
Spatial heterogeneity and phase competition are hallmarks of strongly-correlated materials, promising tunable functionality on the nanoscale. Light-induced switching of a correlated insulator to a metallic state is well established.…
Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum phenomena and potential application in information…
Transition metal dichalcogenides possess valley pseudospin, enabling coupling between photon spin and electron spin for classical and quantum information processing. However, rapid valley-dephasing processes have impeded the development of…
Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the…
The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic…
For applications exploiting the valley pseudospin degree of freedom in transition metal dichalcogenide monolayers, efficient preparation of electrons or holes in a single valley is essential. Here, we show that a magnetic field of 7 Tesla…
In the research of topological phases of matter, valley pseudospins have been introduced into photonic systems. Here, we construct a split-ring photonic crystal (SPC) in which the spilt rings are distributed according to the Kagome model.…
The Valley Hall effect provides a popular route to engineer robust waveguides for bosonic excitations such a photons and phonons. The almost complete absence of backscattering in many experiments has its theoretical underpinning in a…
In valleytronic devices, the valley transport of electrons can carry not only charge but also spin angular momentum (SAM) and orbital angular momentum (OAM). However, investigations on thermoelectric transport of OAM manipulated by valley…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are…
Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the…
In monolayers of transition metal dichalcogenides the nonlocal nature of the effective dielectric screening leads to large binding energies of excitons. Additional lateral confinement gives rise to exciton localization in quantum dots. By…
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…