相关论文: Valley-Orbit Photocurrents in (111)-oriented Si-MO…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…
We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a…
We investigate the optical conductivity, along with longitudinal and transverse conductivities, in buckled hexagonal lattice such as silicene subjected to both an in-plane magnetic field and a perpendicular electric field. In this model, we…
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer…
We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors.…
We investigate the electronic dispersion and transport properties of graphene/WSe$_{2}$ heterostructures in the presence of a proximity-induced spin-orbit coupling $\lambda_{v}$, sublattice potential $\Delta$, and an off-resonant circularly…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The…
Spin and valley dependent anomalous Nernst effect are analyzed for monolayer MoS2 and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of…
Valley polarization (VP), an induced imbalance in the populations of a multi-valley electronic system, allows emission of second harmonic (SH) light even in centrosymmetric crystals such as graphene. Whereas in systems such as…
Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange…
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
Photocurrent generation is studied in a system composed of a quantum wire with side-coupled quantum rings. The current generation results from the interplay of the particular geometry of the system and the use of circularly polarized…
We investigate transient transport of electrons through a single-quantum-dot controlled by a plunger gate. The dot is embedded in a finite wire that is weakly coupled to leads and strongly coupled to a single cavity photon mode. A…
As hosts for tightly-bound electron-hole pairs carrying quantized angular momentum, atomically-thin semiconductors of transition metal dichalcogenides provide an appealing platform for optically addressing the valley degree of freedom. In…
We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the…
Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties…
We investigate the electrical transport properties of the mini-valley polarized state proposed recently in slightly doped Bernal Bilayer Graphene (BLG) in large electric displacement fields. By minimizing the Hartree-Fock energy functional,…
We study the polarization dependence of optical absorption for the modified Haldane model, which exhibits antichiral edge modes in presence of sample boundaries and has been argued to be realizable in transition metal dichalcogenides or…