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相关论文: Valley-Orbit Photocurrents in (111)-oriented Si-MO…

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Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…

介观与纳米尺度物理 · 物理学 2016-03-31 Xie Lu , Xiaodong Cui

We develop a theory of circular photogalvanic effect in non-gyrotropic two-dimensional transition metal dichalcogenide monolayers under interband optical transitions. Oblique incidence of circularly-polarized electromagnetic field or normal…

介观与纳米尺度物理 · 物理学 2021-08-18 M. V. Entin , V. M. Kovalev

We theoretically investigate spin-valley-locked tunneling transport in a transition-metal dichalcogenide/ferromagnetic-insulator heterostructure under a perpendicular magnetic field, driven by the spin Seebeck effect. We demonstrate that…

介观与纳米尺度物理 · 物理学 2026-02-09 Xin Hu , Yuya Ominato , Mamoru Matsuo

Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…

介观与纳米尺度物理 · 物理学 2023-08-10 Xukun Feng , Chit Siong Lau , Shi-Jun Liang , Ching Hua Lee , Shengyuan A. Yang , Yee Sin Ang

We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor…

介观与纳米尺度物理 · 物理学 2022-05-11 M. Lodari , L. Lampert , O. Zietz , R. Pillarisetty , J. Clarke , G. Scappucci

Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…

介观与纳米尺度物理 · 物理学 2021-09-13 Md. S. Hossain , M. K. Ma , K. A. Villegas Rosales , Y. J. Chung , L. N. Pfeiffer , K. W. West , K. W. Baldwin , M. Shayegan

We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the…

介观与纳米尺度物理 · 物理学 2024-08-20 Jarosław Pawłowski , John Eric Tiessen , Rockwell Dax , Junxia Shi

Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…

介观与纳米尺度物理 · 物理学 2016-11-18 S. P. Milovanovic , F. M. Peeters

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a…

介观与纳米尺度物理 · 物理学 2009-11-11 K. Takashina , Y. Ono , A. Fujiwara , Y. Takahashi , Y. Hirayama

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these…

介观与纳米尺度物理 · 物理学 2013-08-27 John King Gamble , M. A. Eriksson , S. N. Coppersmith , Mark Friesen

We develop a theory of the direct interband and indirect intraband photogalvanic effects in Weyl semimetals belonging to the gyrotropic classes with improper symmetry operations. At zero magnetic field, an excitation of such a material with…

介观与纳米尺度物理 · 物理学 2018-08-15 L. E. Golub , E. L. Ivchenko

Magic-angle twisted bilayer graphene displays a complex phase diagram as a function of flat band filling, featuring compressibility cascade transitions and a variety of competing ground states with broken spin, valley and point group…

介观与纳米尺度物理 · 物理学 2026-01-29 Fernando Peñaranda , Héctor Ochoa , Fernando de Juan

Controlling the momentum of carriers in semiconductors, known as valley polarization, is a new resource for optoelectronics and information technologies. Materials exhibiting high polarization are needed for valley-based devices. Few-layer…

介观与纳米尺度物理 · 物理学 2022-12-14 Rasmus H. Godiksen , Shaojun Wang , T. V. Raziman , Jaime Gómez Rivas , Alberto G. Curto

Selective control over the emission pattern of valley-polarized excitons in monolayer transition metal dichalcogenides is crucial for developing novel valleytronic, quantum information, and optoelectronic devices. While significant progress…

The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As)…

We extend the analysis of the effects of electromagnetic (EM) fields on mesoscopic conductors to include the effects of field quantization, motivated by recent experiments on circuit QED. We show that in general there is a photovoltaic (PV)…

介观与纳米尺度物理 · 物理学 2007-05-23 M. G. Vavilov , A. D. Stone

Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…

介观与纳米尺度物理 · 物理学 2020-07-02 Hui-Ying Mu , Yi-Tong Yao , Jie-Ru Li , Guo-Cai Liu , Chao He , Ying-Jie Sun , Guang Yang , Xing-Tao An , Yong-Zhe Zhang , Jian-Jun Liu

In a two-dimensional noncentrosymmetric Ising superconductor in the fluctuating regime under the action of a uniform external electromagnetic field there emerge two contributions to the photogalvanic effect due to the trigonal warping of…

超导电性 · 物理学 2022-10-19 A. V. Parafilo , M. V. Boev , V. M. Kovalev , I. G. Savenko

Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their…

介观与纳米尺度物理 · 物理学 2026-02-24 Adam Gindl , Martin Čmel , František Trojánek , Petr Malý , Martin Kozák