相关论文: Pauli spin blockade and lifetime-enhanced transpor…

We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current…

Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of…

Singlet-triplet spin blockade in a few-electron lateral double quantum dot is investigated using simultaneous transport and charge-sensing measurements. Transport from the (1,1) to the (0,2) electron occupancy states is strongly suppressed…

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map…

Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle,…

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations…

We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the…

We analyzed the electronic transport through a double quantum dot in the spin blockade regime. Experiments of current rectification by Pauli exclusion principle in double quantum dots were discussed. The electron and nuclei spin dynamics…

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with…

In a two-level system, constituted by two serially coupled single level quantum dots, coupled to external leads we find that the current is suppressed in one direction of biasing caused by a fully occupied two-electron triplet state in the…

We propose a spin-sensitive scanning probe microscopy experiment on double quantum dots in Pauli blockade conditions. Electric spin resonance is induced by an AC voltage applied to the scanning gate which induces lifting of the Pauli…

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing…

We predict a new electron pair-tunneling (PT) resonance in non-linear transport through quantum dots with positive charging energies exceeding the broadening due to thermal and quantum fluctuations. The PT resonance shows up in the…

Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double…

We study spin correlation in a double quantum dot containing a few electrons in each dot (around 10). Clear current rectification with negative differential conductance is observed in the cotunneling regime, which is well explained by a…

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of…

Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…

We study electron transport in a double quantum dot in the Pauli spin blockade regime, in the presence of strong spin-orbit coupling. The effect of spin-orbit coupling is incorporated into a modified interdot tunnel coupling. We elucidate…

We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right…